RF Performance of Trigate GaN HEMTs

Alsharef, Mohamed; Christiansen, Max; Granzner, Ralf; Ture, Erdin; Quay, R.; Ambacher, O.; Schwierz, Frank

doi:10.1109/ted.2016.2606701

Cited by 18 publications

(12 citation statements)

References 28 publications

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“…While devices with wider tri-gates did exhibit flatter g m peaks than in planar devices, the full-width at half-maximum (FWHM) of the g m was only about 2.9 V at w fin = 123 nm, which was much smaller than that of the planar device (5.5 V). A similar phenomenon has also been observed in [3], [4], and [14]. While the underlying mechanism for this observation is not yet fully clear, it is likely due to the significant increase in capacitance per fin area (C fin ) with narrowing fins (which will be discussed later).…”

supporting

confidence: 81%

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Santoruvo

Nela

et al. 2019

IEEE Trans. Electron Devices

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In this paper, we present a detailed investiga-1 tion of the impact of fin width (w fin) on tri-gate AlGaN/GaN 2 metal-oxide-semiconductor high electron mobility transis-3 tors (MOSHEMTs). As w fin is reduced, the threshold volt-4 age (V TH) increases, which is due to the enhanced gate 5 control (especially for w fin < 200 nm) thanks to the 3-D 6 geometry of the tri-gate, and the reduced carrier concen-7 tration (N s) caused by a more pronounced strain relax-8 ation and sidewall depletion, as explored using Hall and 9 capacitance-voltage (C-V) measurements. The normally-10 OFF operation was achieved for w fin close to the sidewall 11 depletion width (w dep) of 19.5 nm, since the fin is depleted 12 from its two sidewalls. The impact of w fin on ON-resistance 13 (R ON) and current capability (I D,max) was also investigated, 14 along with the influence of the effective source injection, 15 the trench conduction and the filling factor (FF) on these 16 key characteristics. The degradation caused by the tri-gate 17 fin etching could be fully recovered by increasing the FF. 18 Finally, we show that the tri-gate can reduce gate capac-19 itance (C G) and charge (Q G) in normally-ON MOSHEMTs, 20 depending on the design of the tri-gate and the gate voltage 21 (V G), leading to a smaller R ON • Q G product that is benefi-22 cial for high-frequency switching applications. The results 23 in this paper offer insights into important phenomena in 24 tri-gate GaN devices and are fundamental for the further 25 advance of this technology. 26 Index Terms-Drain current, fin width, GaN, gate capaci-27 tance, threshold voltage, tri-gate. 28 I. INTRODUCTION 29 T RI-GATE technologies have recently attracted consider-30 able attention for lateral GaN electronic devices [1]-[20], 31 thanks to many advantages over conventional planar gates. 32 First, the V TH in tri-gate GaN metal-oxide-semiconductor 33 high electron mobility transistors (MOSHEMTs) increases 34 as w fin decreases, hence, the normally-OFF operation can be 35

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supporting

confidence: 81%

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Santoruvo

Nela

et al. 2019

IEEE Trans. Electron Devices

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“…Accordingly, the device dimensions, based on high PFoM and optimized values of f T and f MAX , for AlN/ β ‐Ga 2 O 3 HEMT corresponding to case 1 ( L GD = 1.2 μm, L GS = 0.32 μm, L HL = 0.18 μm, L FL = 0.12 μm, and t buffer = 0.47 μm) are selected for detailed dc and RF analysis. It is worth to mention that, corresponding to case 1, L GD = 1.2 μm is preferred over L GD = 1.0 μm to have lower value of the output conductance ( g ds ) 32 . Doping concentrations and ohmic contact resistance are kept same as given for delta‐doped β ‐Ga 2 O 3 MESFET 14 …”

Section: Resultsmentioning

confidence: 99%

“…It is worth to mention that, corresponding to case 1, L GD = 1.2 μm is preferred over L GD = 1.0 μm to have lower value of the output conductance (g ds ). 32 Doping concentrations and ohmic contact resistance are kept same as given for deltadoped β-Ga 2 O 3 MESFET.…”

Section: Scaling Of L Gd and T-gate Dimensionsmentioning

confidence: 99%

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Singh¹,

Rao

Lenka

et al. 2023

Int J Numerical Modelling

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In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility transistors (HEMTs) by optimizing the gate‐drain distance (LGD) and two T‐gate dimensions given by the—head‐length (LHL) and the foot‐length (LFL). A two‐dimensional (2‐D) physics‐based device simulator attuned with experimental results is used to perform the analysis. The AlN/β‐Ga2O3 HEMT achieves a high two‐dimensional electron gas (2DEG) density of ~3 × 1013 cm−2, which is attributed to large spontaneous as well as piezoelectric polarization components of the 10 nm AlN thick barrier layer. 2DEG density is also numerically validated using widely used polarization model for III nitrides. It is demonstrated that a highly scaled, both lateral and vertical, device with optimized T‐gate dimensions achieves higher blocking voltage (VBR), low on‐resistance (RON), higher cut‐off frequency (fT) and higher maximum oscillation frequency (fMAX), simultaneously. Consequently, AlN/β‐Ga2O3 HEMT achieves a low specific‐on resistance (RON,sp) of 0.1 mΩ cm2 and an off‐state breakdown voltage of 904 V, which corresponds to the record power figure‐of‐merit (PFoM) of ~8172 MW/cm2. Furthermore, fT of 73 GHz and fMAX of 142 GHz are estimated. These results—low power conduction loss along with higher blocking voltage, and superior RF parameters show the potential of the analyzed device T‐gate AlN/β‐Ga2O3 HEMT for high‐power switching and RF applications.

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“…[ 18 ] As the size of the device decreases, the short‐channel effect also occurs, which affects the performance of the device. [ 19 ] Neha [ 20 ] adopted the method of increasing the gate field plate and source field plate, reduced the gate length to 0.25 μm, and obtained the maximum cut‐off frequency of the device is 38 GHz, and the breakdown voltage is 127 V. ASA. Fletcher [ 21 ] increased the device's breakdown voltage by using a double‐layer T‐type gate, the breakdown voltage reached 136 V, and the cut‐off frequency was 60 GHz.…”

Section: Introductionmentioning

confidence: 99%

Study on the Point‐Contact Gate AlGaN/GaN High Electron Mobility Transistor with 0.1 μm Gate Length

Luo

Liu

Jiang

2023

Physica Status Solidi (a)

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The current collapse has been one of the most challenging problems in AlGaN/GaN high electron mobility transistors (HEMTs). In recent years, the virtual gate effect has been the most widely accepted cause of the current collapse effect. To effectively improve the current collapse effect and reduce the influence of the virtual gate effect on the device, a point‐contact gate AlGaN/GaN HEMT structure is proposed in this article. Tests show that the device has high transconductance, high cut‐off frequency, and good transfer, output, and breakdown characteristics. The maximum saturation drain current is 18 mA mm−1, the maximum transconductance is 200 mS mm−1, the breakdown voltage is 994 V, the maximum current gain is about 190 dB, and the cut‐off frequency is up to 206 GHz when the gate length and width are 0.1 μm × 0.001 μm. The experimental analysis shows that the point‐contact gate AlGaN/GaN HEMT structure shortens the gate length, thereby improving the virtual gate effect and effectively suppressing the current collapse effect, increasing the breakdown voltage of the device, and further improving the device performance, which lays the foundation for the future research of AlGaN/GaN HEMT.

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RF Performance of Trigate GaN HEMTs

Cited by 18 publications

References 28 publications

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Study on the Point‐Contact Gate AlGaN/GaN High Electron Mobility Transistor with 0.1 μm Gate Length

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RF Performance of Trigate GaN HEMTs

Cited by 18 publications

References 28 publications

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications

Study on the Point‐Contact Gate AlGaN/GaN High Electron Mobility Transistor with 0.1 μm Gate Length

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Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications