RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part II: Extrinsic Results

Paydavosi, Navid; Rebstock, J P; Holland, Kyle D.; Ahmed, Shamsuddin; Alam, Ahsan; Vaidyanathan, Mani

doi:10.1109/ted.2011.2149530

Cited by 16 publications

(17 citation statements)

References 48 publications

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“…3.b), which is in the same order of magnitude as results reported in Ref. [5] for devices with smaller channel length, but higher parasitic gate resistance. NF min has the desirable property of being near its minimum value for a biasing range, where device speed is highest (Fig.…”

Section: B Noise Modelsupporting

confidence: 85%

Carbon nanotube FET process variability and noise model for radiofrequency investigations

Landauer

González

2012

2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)

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This work focuses on process variability and noise in carbon nanotube field-effect transistors (CNFET) to obtain a compact model usable for radiofrequency (RF) design and simulations. CNFET figures of merit (FoM) are determined and compared to International Technology Roadmap for Semiconductors (ITRS) requirements on conventional analog silicon-based devices. The developed model is also used to investigate on the impact of manufacturing process variability on the CNFET's RF-performance and noise behavior.

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Section: B Noise Modelsupporting

confidence: 85%

Carbon nanotube FET process variability and noise model for radiofrequency investigations

Landauer

González

2012

2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)

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“…By extending the measured gain to 0 dB with a −20 dB/dec slope, f T and f max can be extracted as f T,ext of 212 GHz and f max,ext of 123 GHz, which sets records for randomly orientated CNT RF transistors. Since the maximum stable power gain (MSG) f slope is −10 dB/dec, the f max extrapolation by the −20 dB/dec slope in this work is the most conservative extraction. It could be optimistically speculated that CNT RF amplifier may cover the whole K-band and reach up to 41 GHz for the Q-band (one third of the 123 GHz f max,ext ).…”

Section: Resultsmentioning

confidence: 99%

“…Due to the high carrier saturation velocity, small intrinsic capacitance, and excellent stability, the carbon nanotube (CNT) has been considered as a promising material for constructing radio frequency (RF) field-effect transistors (FETs) with potentially ultrahigh current gain cutoff frequency ( f T ) and maximum oscillation frequency ( f max ) for terahertz (THz) device and circuit applications. − Furthermore, the long mean free length at room temperature in the CNT benefits to realize FETs with ballistic transport properties, , and thus intrinsic linearity, which is the key metric for RF amplifier applications, demonstrated from theoretical ,, and empirical work . A series of experimental − and theoretical explorations have been executed on CNT RF FETs at the early stage of CNT-based electronics. However, the actual CNT RF FETs performed with poor performance far from expectations mainly owing to the simultaneous insufficiencies of semiconducting purity and large-scale uniformity of the CNT materials.…”

Section: Introductionmentioning

confidence: 99%

Carbon Nanotube Based Radio Frequency Transistors for K-Band Amplifiers

Zhou

Liu

Shi

et al. 2021

ACS Appl. Mater. Interfaces

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Owing to the combination of high carrier mobility and saturation velocity, low intrinsic capacitance, and excellent stability, the carbon nanotube (CNT) has been considered as a perfect semiconductor to construct radio frequency (RF) fieldeffect transistors (FETs) and circuits with an ultrahigh frequency band. However, the reported CNT RF FETs usually exhibited poor real performance indicated by the as-measured maximum oscillation frequency (f max ), and then the amplifiers, which are the most important and fundamental RF circuits, suffered from a low power gain and a low frequency band. In this work, we build RF transistors on solution-derived randomly orientated CNT films with improved quality and uniformity. The randomly orientated CNT film FETs exhibit the record as-measured maximum f max of 90 GHz, demonstrating the potential for over 28 GHz (at least one-third of 90 GHz) 5G mmWave (frequency range 2) applications. Benefiting from the large-scale uniformity of CNT films, FETs are designed and fabricated with a large channel width to present low internal resistance for the standard 50 Ω impedance matching guide line, which is critical to construct an RF amplifier. Furthermore, we first demonstrate amplifiers with a maximum power gain up to 11 dB and output third-order intercept point (OIP3) of 15 dBm, both at the K-band, which represents the record of a CNT amplifier and is even comparable with a commercial amplifier based on III−V RF transistors.

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“…Although the simulations in this work are carried at a different technology node in comparison with [19], but the trends in Figs. 8 and 9 still match to its published RF FOMs.…”

Section: Rf Characterisationmentioning

confidence: 99%

“…Similarly, [17] reports an RF mixer mixing at 50 GHz using a single‐walled (SW) CNT transistor. References [18, 19] provide a quantitative measure of RF performance of array‐based CNFETs; however, the analysis is limited to the transistor level. Most of the above works, firstly, do not reflect the true RF potential of the CNFETs, and secondly do not provide a detailed improvement comparison over CMOS circuits so that the CNFET results can be put into perspective, especially at high frequencies.…”

Section: Introductionmentioning

confidence: 99%