RF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes

Lee, Jongwon; Yang, Kyounghoon

doi:10.1109/lmwc.2016.2629984

Cited by 16 publications

(13 citation statements)

References 11 publications

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“…In addition, due to the nonlinear property of tunnel diode, there exists nonlinear operation region where the amplification gain is nonlinear but the phase is almost perfectly preserved. Therefore, the reflection amplifier should be properly deployed at the area where the power of the attenuated incident signal is in its linear operation region [32]. Besides, even when the reflection amplifier operates in the nonlinear region, it can still assist the signal with the phase modulation.…”

Section: A Preliminarymentioning

confidence: 99%

Active Reconfigurable Intelligent Surface-Aided Wireless Communications

Long

Liang

Pei

et al. 2021

IEEE Trans. Wireless Commun.

408

230

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Reconfigurable Intelligent Surface (RIS) is a promising solution to reconfigure the wireless environment in a controllable way. To compensate for the double-fading attenuation in the RISaided link, a large number of passive reflecting elements (REs) are conventionally deployed at the RIS, resulting in large surface size and considerable circuit power consumption. In this paper, we propose a new type of RIS, called active RIS, where each RE is assisted by active loads (negative resistance), that reflect and amplify the incident signal instead of only reflecting it with the adjustable phase shift as in the case of a passive RIS. Therefore, for a given power budget at the RIS, a strengthened RIS-aided link can be achieved by increasing the number of active REs as well as amplifying the incident signal. We consider the use of an active RIS to a single input multiple output (SIMO) system. However, it would unintentionally amplify the RIS-correlated noise, and thus the proposed system has to balance the conflict between the received signal power maximization and the RIS-correlated noise minimization at the receiver.To achieve this goal, it has to optimize the reflecting coefficient matrix at the RIS and the receive beamforming at the receiver. An alternating optimization algorithm is proposed to solve the problem. Specifically, the receive beamforming is obtained with a closed-form solution based

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Section: A Preliminarymentioning

confidence: 99%

Active Reconfigurable Intelligent Surface-Aided Wireless Communications

Long

Liang

Pei

et al. 2021

IEEE Trans. Wireless Commun.

408

230

View full text Add to dashboard Cite

show abstract

“…Table 1 shows a performance comparison in terms of the NF for the RTD amplifier with other microwave low‐power amplifiers dissipating dc‐power below a milli‐watt for C‐band [2, 3, 6, 8, 14–19]. The f C , BW 3dB , and S 21_max denote the centre frequency, 3 dB bandwidth, and maximum S 21 , respectively.…”

Section: Nf Analysismentioning

confidence: 99%

“…The widespread use of wireless portable devices such as smart phones and Internet of Thing (IoT) sensors has led to the development of ultra‐low‐power radio‐frequency (RF) integrated circuits (ICs) to increase the battery life [1–3]. Ultra‐low‐power reflection‐type amplifiers using resonant tunnelling diodes (RTDs) have been explored [4–6]. The RTD amplifier microwave monolithic integrated circuit (MMIC) showed a power gain of about 10 dB even at dc power ( P DC ) of a hundred micro‐watt level [5].…”

Section: Introductionmentioning

confidence: 99%

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Noise analysis of reflection‐type microwave RTD amplifier

Lee

2020

IET Circuits, Devices & Systems

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“…InP RTD-based microwave amplifier ICs with low dc-power dissipation (P DC ) in the sub-milliwatt range at the C-band have been demonstrated [3,4]. Their RF output power characteristics have been analysed based on a harmonic balance non-linear simulation [5]. In addition to the P DC and RF output power performance, the temperature-dependent characteristic of a microwave amplifier needs to be investigated for practical IC applications.…”

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confidence: 99%

Temperature‐dependent characteristics of InP‐RTD‐based microwave amplifier IC

Lee

Yang

2017

Electron. lett.

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A reflection-type microwave amplifier using InP-based resonant tunnelling diodes (RTDs) has been designed and fabricated. The implemented amplifier shows a low dc-power consumption of 270 μW with RF gains of more than 11 dB at 5.61 GHz. Temperature-dependent characteristics of the RTD amplifier have been investigated at a high temperature. With increasing temperature from 25 to 100°C, the centre frequency shift was measured to be 60 MHz. The RF gains (S 21 /S 12) and the return losses (S 11 /S 22) of the amplifier decreased from 11.45/11.32 and −7.96/−8.11 dB at 25°C to 7.06/6.91 and −11.36/−11.15 dB at 100°C, respectively. The S-parameter degradation phenomena are shown to mainly arise from the temperature dependence of the negative differential resistance (R D) characteristic for the fabricated RTD.

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RF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes

Cited by 16 publications

References 11 publications

Active Reconfigurable Intelligent Surface-Aided Wireless Communications

Active Reconfigurable Intelligent Surface-Aided Wireless Communications

Noise analysis of reflection‐type microwave RTD amplifier

Temperature‐dependent characteristics of InP‐RTD‐based microwave amplifier IC

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