RF power density dependent phase formation in hydrogenated silicon films

Parashar, Avinash; Kumar, Sushil; Gope, Jhuma; Rauthan, C. M. S.; Hashmi, S.A.; Dixit, P. N.

doi:10.1016/j.jnoncrysol.2010.07.019

Cited by 10 publications

(3 citation statements)

References 38 publications

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“…In order to promote phase transition from a-Si:H to nanocrystallization of the nc-Si:H thin films, the plasma-assisted chemical vapor deposition (PECVD) system is widely used [6,7]. Processing parameters of argon dilution [8,9], deposition pressure [10], power density [11], SiH 4 flow [12], temperature [13], ratio of H 2 /SiH 4 [14], excitation frequency [15], and electrode separation [16] have been investigated. In addition, SiH radicals have a crucial influence on nc-Si deposition [17].…”

Section: Introductionmentioning

confidence: 99%

Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

et al. 2019

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In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH4 plasma diluted by various hydrogen dilution ratios. At the onset of nanocrystallinity in SiH4− depleted plasma condition, the SiH+ radical reached a threshold value as the dominant radical, such that a-Si to nc-Si transition was obtained. Furthermore, the experimental data of impedance analysis showed that matching behavior can be greatly influenced by variable plasma parameters due to the change of various hydrogen dilution ratios, which is consistent with the recorded optical emission spectra (OES) of Hα* radicals. Quadruple mass spectrometry (QMS) and transmission electron microscopy (TEM) were employed as associated diagnostic and characterization tools to confirm the phase transformation and existence of silicon nanocrystals.

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Section: Introductionmentioning

confidence: 99%

Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

et al. 2019

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“…In the present investigation, we have adopted the same approach and the impedance of the empty cell without discharge was found to be $5-7 X. Recently, we have used an impedance probe analyzer (VI probe) for the characterization of silane plasma for the growth of nanocrystalline silicon films, 30,36 and the same probe analyzer has been used in the present investigation for the growth of diamond like carbon (DLC) films.…”

Section: Introductionmentioning

confidence: 99%

Investigation of radio frequency plasma for the growth of diamond like carbon films

et al. 2012

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Growth mechanisms of ZnO(0001) investigated using the first-principles calculation J. Appl. Phys. 112, 064301 (2012) Generation of silver-anatase nanocomposite by excimer laser-assisted processing AIP Advances 2, 032171 (2012) Degradation and passivation of CuInSe2The radio frequency has been used to generate plasma of argon, acetylene gases, and their mixture should be replaced by mixture in a plasma enhanced chemical vapor deposition system. The generated plasma discharge has been characterized by an impedance analyzer (VI probe) for the evaluation of various electrical parameters of the plasma discharge such as rf-voltage, rf-current, phase, impedance, and actual power consumed by the plasma discharge. These plasma parameters have been analyzed as a function of self-bias, which are found to depend on applied power, pressure, and reactor geometry of the system. Subsequently, same plasma conditions were used for the deposition of diamond like carbon (DLC) films. The argon plasma has lowest impedance (16.02 X) value and highest average electron density (2.77 Â 10 10 cm À3 ) value at À150 V self-bias. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements have been performed on the prepared DLC films for the evaluation of the chemical bonding. XPS studies have been used for the evaluation of sp 3 and sp 2 contents. The film deposited at À150 V self-bias has the highest values of sp 3 content (60.97 at. %), band gap, nanohardness, elastic modulus, plastic index parameter, and elastic recovery, and the lowest value of sp 2 content (27.27 at. %) among the films chosen for the present investigation. These DLC films properties were found to be well correlating with the evaluated plasma parameters. V C 2012 American Institute of Physics. [http://dx.

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“…In contrast, for the gate of a thin film transistor (TFT), nanocrystalline Si with a high crystalline volume and uniform grain size is required for high mobility and good stability [5,6]. The commonest method of obtaining nanocrystalline Si is plasma-enhanced chemical vapor deposition (PECVD) using a mixture of silane (SiH 4 ) and hydrogen (H 2 ) gases; hydrogenated nanocrystalline Si (nc-Si:H) is formed, and its crystallinity depends on the H 2 flow rate or the plasma power [3,[7][8][9]. Hydrogen radicals are known to preferentially etch amorphous Si, and the exothermic heat generated during etching allows local recrystallization by chemical annealing [10,11].…”

Section: Introductionmentioning

confidence: 99%

Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition

Kwon

Nam

Jeong

et al. 2012

Advances in Materials Science and Engineering

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The crystalline volume of nanocrystalline silicon (Si) films could be successfully controlled simply by changing the substrate scan speed at the high working pressure of 300 Torr. The Si crystalline volume fraction was increased from 30% to 57% by increasing the scan speed from 8 to 30 mm/s. When the Si film was prepared at a low scan speed (8 mm/s), Si crystals of size 5 nm grew homogeneously through the whole film. The higher scan speed was found to accelerate crystallization, and crystals of size up to 25 nm were deposited in the Si film deposited when the scan speed was 30 mm/s.

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RF power density dependent phase formation in hydrogenated silicon films

Cited by 10 publications

References 38 publications

Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

Investigation of radio frequency plasma for the growth of diamond like carbon films

Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition

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