Robust ESD-Reliability Design of 300-V Power N-Channel LDMOSs with the Elliptical Cylinder Super-Junctions in the Drain Side

Abstract

The weak ESD-immunity problem has been deeply persecuted in ultra high-voltage (UHV) metal-oxide-semiconductor field-effect transistors (MOSFETs) and urgently needs to be solved. In this paper, a UHV 300 V circular n-channel (n) lateral diffused MOSFET (nLDMOS) is taken as the benchmarked reference device for the electrostatic discharge (ESD) capability improvement. However, a super-junction (SJ) structure in the drain region will cause extra depletion zones in the long drain region and reduce the peak value of the channel electric field. Therefore, it may directly increase the resistance of the device to ESD. Then, in this reformation project for UHV nLDMOSs to ESD, two strengthening methods were used. Firstly, the SJ area ratio changed by the symmetric eight-zone elliptical-cylinder length (X) variance (i.e., X = 5, 10, 15 and 20 μm) is added into the drift region of drain side to explore the influence on ESD reliability. From the experimental results, it could be found that the breakdown voltages (VBK) were changed slightly after adding this SJ structure. The VBK values are filled between 391 and 393.5 V. Initially, the original reference sample is 393 V; the VBK changing does not exceed 0.51%, which means that these components can be regarded as little changing in the conduction characteristic after adding these SJ structures under the normal operating conditions. In addition, in the ESD transient high-voltage bombardment situation, the human-body model (HBM) capability of the original reference device is 2500 V. Additionally, as SJs with the length X high-voltage P-type well (HVPW) are inserted into the drain-side drift region, the HBM robustness of these UHV nLDMOSs increases with the length X of the HVPW. When the length X (HVPW) is 20 μm, the HBM value can be upgraded to a maximum value of 5500 V, the ESD capability is increased by 120%. A linear relationship between the HBM immunity level and area ratio of SJs in the drains side in this work can be extracted. The second part revealed that, in the symmetric four-zone elliptical cylinder SJ modulation, the HBM robustness is generally promoted with the increase of HVPW SJ numbers (the highest HBM value (4500 V) of the M5 device improved by 80% as compared with the reference device under test (DUT)). Therefore, from this work, we can conclude that the addition of symmetric elliptical-cylinder SJ structures into the drain-side drift region of a UHV nLDMOS is a good strategy for improving the ESD immunity.

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

“…Even a small defect during manufacturing can cause considerable losses to the manufacturer. Electrostatic discharge (ESD) events [1][2][3][4][5][6][7][8][9][10] for integrated circuits (ICs) are the major hazard to reliability.…”

Industrial Applications of Power Electronics

“…In the semiconductor area of research, a robust electrostatic discharge reliability design of an ultra-high voltage 300-V power n-channel lateral diffused MOSFETs, with elliptical cylinder super-junctions in the drain side, is given in [25]. The authors have concluded that this is a decent strategy and the human-body model capability of these ultra-high voltage n-channel lateral diffused MOSFETs could be successfully improved without altering the basic electrical properties or adding any extra cell area.…”