Robust X-band GaN LNA with Integrated Active Limiter

Yagbasan, Cagdas; Aktug, Ahmet

doi:10.23919/eumic.2018.8539928

Cited by 10 publications

(8 citation statements)

References 8 publications

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“…There are rather few reported works for RRT measurements. Yağbasan and Aktuğ 25 have reported RRT of 40 and 10 ms with gain compression of 33 and 3 dB, respectively, for the corresponding P in being 36 and 21 dBm. RRT of 30 ns for gain compression levels of around 8 dB is reported by Liero et al 22 The proposed LNA shows the RRT value of 20 ms and 27 ns with 34 and 12 dB gain compression, respectively.…”

Section: Resultsmentioning

confidence: 98%

“…Previously, 25 RRT is reported as 40 and 10 ms for gain compression levels of 33 and 3 dB, respectively. Liero et al 22 reported the recovery time for LNA as low as 30 ns with a gain compression of around 8 dB.…”

Section: Introductionmentioning

confidence: 95%

“…Kazan et al 23 have presented an X ‐band GaN LNA with 34 dBm input survivability, and the same LNA is used to develop an X ‐band transceiver MMIC 24 . Yağbasan and Aktuğ proposed two LNA designs in X ‐band, and the one with passive limiter survived 37 dBm input power (P in ) 25 . Kim et al 26 demonstrated robust current‐shared LNA surviving 37 dBm RF input stress level.…”

Section: Introductionmentioning

confidence: 99%

“…24 Ya gbasan and Aktu g proposed two LNA designs in X-band, and the one with passive limiter survived 37 dBm input power (P in ). 25 Kim et al 26 demonstrated robust current-shared LNA surviving 37 dBm RF input stress level. A highly survivable (41 dBm P in ) X-band MMIC LNA has been demonstrated by Colangeli et al, 18 suitable for synthetic aperture radar systems.…”

mentioning

confidence: 99%

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Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Zafar

Akoglu

Aras

et al. 2022

Circuit Theory & Apps

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In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN on a SiC HEMT process. Owing to the optimum choice of HEMT topologies and simultaneous matching technique, LNA achieves a noise figure better than 2 dB, output power at 1 dB gain compression higher than 19 dB, input and output reflection coefficients better than À9 and À11 dB, respectively. The small-signal gain of LNA is more than 19 dB for the whole band, and NF has a minimum of 1.74 dB at 10.2 GHz. LNA obtains an OIP3 up to 34.2 dBm and survives input power as high as 42 dBm. Survivability is investigated in terms of gain compression and forward gate current. Reverse recovery time (RRT), a crucial parameter for radar front-ends, is explored with respect to the RC time constant and trap phenomenon. The analysis shows that the significant contribution in RRT is due to traps while the RC time constant is in the nanoseconds range. Moreover, this study also addresses the requirement and choice of a DC gate feed resistor for the subsequent stages in a multi-stage design. The size of the designed LNA chip is 3 mm Â 1.2 mm only.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Zafar

Akoglu

Aras

et al. 2022

Circuit Theory & Apps

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“…This, however, still requires prior knowledge of the interfering signal, and limits the instantaneous operating bandwidth of the RF chain. Furthermore, limiters frequently suffer from limited linearity, and recovery times of up to 10-40 ms [8].…”

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confidence: 99%

Multi-Octave Interference Detectors with Sub-Microsecond Response

Khater,

Peroulis

2022

Preprint

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High-power interferers are one of the main hurdles in wideband communication channels. To that end, this paper presents a wideband interferer detection method. The presented technique operates by sampling the incoming signal as an input, and produces the frequency and the power readings of the detected interferer. The detection method relies on driving an open circuit stub, where the voltage is proportional to the power of the interferer, and the standing wave pattern is an indicator of its frequency. This approach is feasible over multi-octave bandwidth with a wide power dynamic range. The concept is analyzed for design and optimization, and a prototype is built for a proof-of-concept. The measured results demonstrate the ability to detect an interferer within the 1-16 GHz frequency range, with a power dynamic range between -20 to 20 dBm. The detection concept is also fitted with different types of tunable bandstop filters (BSFs) for automatic detection and suppression of the interferer if its power exceeds a programmable threshold. With a measured response time of 500 ns, the presented method is a technology enabler for wideband receivers.

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Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications

Imran Nawaz,

Zafar,

Gurdal

et al. 2024

Circuit Theory & Apps

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SummaryCascode HEMTs exhibit high gain and broadband performance. Promising reverse transmission makes matching networks simpler and insensitive to impedance on either side of the HEMT. On the other hand, common source (CS) HEMTs with intentional small inductance at the source provide simultaneous match for optimum noise and input impedance. This paper provides a performance comparison of μm cascode HEMTs‐based low‐noise amplifier and μm CS HEMTs‐based low‐noise amplifiers with specific emphasis on robustness, including survivability and reverse recovery time (RRT). Cascode LNA survives an input power of 33 dBm while CS LNA handles 30 dBm power, each having a 1 k passive limiting resistor on the gate bias line. RRT of cascode LNA is also better. Better survivability and RRT for cascode LNA are attributed to its HEMT's stacked configuration. The designs of LNAs are described, along with their small‐signal, noise, and large‐signal characteristics in the X‐band. Cascode LNA has a better input match, while CS LNA has a better output match. Gains are comparable, while CS LNA has better P1dB at higher band edge frequency. The noise figure for both LNAs is less than 1.9 dB, with CS LNA having a slight edge over cascode. This study benefits RF designers in choosing appropriate HEMT topology as per application for designing robust low‐noise amplifiers.

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Robust X-band GaN LNA with Integrated Active Limiter

Cited by 10 publications

References 8 publications

Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications

Multi-Octave Interference Detectors with Sub-Microsecond Response

Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications

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