Role of base layer in CVD Si/sub 3/N/sub 4/ stack gate dielectrics on the process controllability and reliability in direct tunneling regime

Eriguchi, Koji; Harada, Yukihiro; Niwa, Miki

doi:10.1109/iedm.1999.824161

Cited by 8 publications

(4 citation statements)

References 10 publications

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“…14 This indicates that the minimum distance for a strain free connection between amorphous SiON and crystal Si is 1 nm. In addition, our experimental results for the stacked structure also corresponds to the electrical properties of the CVD-Si 3 N 4 /SiON/Si structure reported by Eriguchi et al 15 The idea of the relaxation of strained energy by adding O atoms is similar to that of the constraint theory. 4 In comparison with our experimental results, the increasing regions of the V FB shift and the ⌬V FB ͑Fig.…”

Section: Structure Analysis-the Ternary Composition Diagram Of Bulksupporting

confidence: 81%

Effect of Oxygen in Deposited Ultrathin Silicon Nitride Film on Electrical Properties

Muraoka

Kurihara

2002

J. Electrochem. Soc.

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The role of oxygen inside deposited Si 3 N 4 films has been investigated. We successfully controlled the oxygen concentration inside the bulk SiON and thickness of SiO 2 layer at Si 3 N 4 /Si interface independently. In the case in which the capacitance-voltage measurement is used, it is found that the defect density inside the SiON film containing 30% oxygen with the interlayer SiO 2 thickness of 1 nm is as little as that inside a SiO 2 film at the equivalent oxide thickness ranging from 4.2 to 4.5 nm. Moreover, we confirmed by X-ray photoelectron spectroscopy analysis that the bonding states of N and O atom inside the bulk region were mainly NwSi 3 and OvSi 2 . The above results and the fact that 500°C as-deposited film composition obeys the alloy model (Si 3 N 4 ) x (SiO 2 ) 1Ϫx , indicate that the stacked structure of SiON(N គ wSi 3 :O គ vSi 2 ϭ 2x:1 Ϫ x(xԼ0.34))/SiO 2 (1 nm)/Si can achieve the minimum defect density. These results suggest that the addition of O atom releases strained energy in the bulk Si 3 N 4 and the Si 3 N 4 /Si interface regions.Recently, it has been suggested that deposited SiON and Si 3 N 4 films are promising gate dielectrics. In particular, the excellent electric properties, such as low leakage current and low defect density, of remote plasma-enhanced chemical vapor deposition ͑PE-CVD͒ film have been reported by Yang and Lucovsky, 1 those of jet vapor deposition film by Ma, 2 and those of low-pressure CVD film by Kwong et al. 3 As a result of these reports, it is recognized that oxygen atoms play an important role in the Si 3 N 4 film.Regarding the relationship between the ternary material such as SiON and the defect, the constraint theory by Lucovsky and Phillips is widely known. 4 This theory is based on the idea that all of the bonding forces in a covalently bonded network can be arranged in a hierarchy from strong to weak. The constraining effects of these forces are a linear function of average coordination number, N av ͑bonds/atom͒. It has already been reported that N av ϭ 3 represents a criterion between low defect density and increasingly defective materials. 4 However, a strong correlation among the N av , the electrical defect and the microstructures of bulk and interface regions has not been directly examined until now.This work clarifies the electrical and physical effects of the oxygen atom in the Si 3 N 4 /Si system. In order to do this, we tried to control the oxygen profile and concentration independently. ExperimentalProcess steps were performed in a SiON plasma-enhanced CVD apparatus as shown in Fig. 1. SiH 4 , O 2 , and N 2 radical gases are injected from different nozzles into the CVD chamber independently. In particular, N 2 radical gas is injected through a boron nitride tube for microwave plasma excitation ͑2.45 GHz, 100 W͒. The deposition was performed at room temperature and 500°C, and the total pressure was in the range from 1.1 to 1.2 Torr. Moreover, in order to intentionally control the oxygen concentration inside bulk SiON region, we controlled the O 2 pa...

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Section: Structure Analysis-the Ternary Composition Diagram Of Bulksupporting

confidence: 81%

Effect of Oxygen in Deposited Ultrathin Silicon Nitride Film on Electrical Properties

Muraoka

Kurihara

2002

J. Electrochem. Soc.

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“…Only a few methods have been proposed for such a precise N-atom-profile control up to now. [4][5][6][7] Recently, we have developed a technique for N-atom-profile engineering by employing selflimiting atomic-layer deposition ͑ALD͒ of silicon nitride. [8][9][10] In this study, we have fabricated metal-oxidesemiconductor ͑MOS͒ diodes with a very thin ALD siliconnitride layer on the top of gate SiO 2 and reliability enhancement has been demonstrated.…”

Section: ͓S0003-6951͑00͒00544-1͔mentioning

confidence: 99%

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Nakajima

Yoshimoto

Kidera

et al. 2000

Applied Physics Letters

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An extremely thin (∼0.4 nm) silicon-nitride layer has been deposited on thermally grown SiO2 by an atomic-layer-deposition (ALD) technique. The boron penetration through the stacked gate dielectrics has dramatically been suppressed, and the reliability has been significantly improved, as confirmed by capacitance–voltage, gate-current–gate-voltage, and time-dependent dielectricbreakdown characteristics. The ALD technique allows us to fabricate an extremely thin, very uniform silicon-nitride layer with atomic-scale control.

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“…Therefore, it is desirable to introduce the Si nitride Manuscript layer only at the poly-Si gate/dielectric interface. However, only a few methods have been proposed for such a precise control of nitrogen atom-profile up to now [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO₂ stack gate dielectrics

Nakajima

Khosru

Kasai

et al. 2003

IEEE Electron Device Lett.

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P + -poly-Si gate MOS transistors with atomiclayer-deposited Si-nitride/SiO 2 stack gate dielectrics (EOT = 2 50 nm) have been fabricated. Similar to the reference samples with SiO 2 gate dielectrics ( ox = 2 45 nm), clear saturation characteristics of drain current are obtained for the samples with stack gate dielectrics. Identical hole-effective mobility is obtained for the samples with the SiO 2 and the stack gate dielectrics. The maximum value of hole-effective mobility is the same (54 cm 2 /Vs) both for the stack and the SiO 2 samples. Hot carrier-induced mobility degradation in transistors with the stack gate dielectrics was found to be identical to that in transistors with the SiO 2 gate dielectrics. In addition to the suppression of boron penetration, better TDDB characteristics, and soft breakdown free phenomena for the stack dielectrics (reported previously), the almost equal effective mobility (with respect to that of SiO 2 dielectrics) has ensured the proposed stack gate dielectrics to be very promising for sub-100-nm technology generations.

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Role of base layer in CVD Si/sub 3/N/sub 4/ stack gate dielectrics on the process controllability and reliability in direct tunneling regime

Cited by 8 publications

References 10 publications

Effect of Oxygen in Deposited Ultrathin Silicon Nitride Film on Electrical Properties

Effect of Oxygen in Deposited Ultrathin Silicon Nitride Film on Electrical Properties

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO₂ stack gate dielectrics

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Role of base layer in CVD Si/sub 3/N/sub 4/ stack gate dielectrics on the process controllability and reliability in direct tunneling regime

Cited by 8 publications

References 10 publications

Effect of Oxygen in Deposited Ultrathin Silicon Nitride Film on Electrical Properties

Effect of Oxygen in Deposited Ultrathin Silicon Nitride Film on Electrical Properties

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics

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Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO₂ stack gate dielectrics