Role of Excess Bi in SrBi2Ta2O9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method

Koiwa, Ichiro; Okada, Yukihisa; Mita, Juro; Hashimoto, Akira; Sawada, Yoshihiro

doi:10.1143/jjap.36.5904

Cited by 37 publications

(5 citation statements)

References 7 publications

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“…20,21 The EDAXs performed on the bulk material are in agreement with the presence of minor phases revealed by XRD. However, a systematic enrichment in bismuth ͑Bi/ Sr+ Nb= 0.77 instead of 0.67͒ to the detriment of both strontium and niobium is observed.…”

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confidence: 78%

Thermal conductivity of SrBi2Nb2O9 ferroelectric thin films

Boffoue

Jacquot

Duclère

et al. 2006

Applied Physics Letters

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Ferroelectric Aurivillius SrBi2Nb2O9 films of different thicknesses were prepared on Si(100) substrates by pulsed laser deposition. The films are polycrystalline and exhibit an increased grain size with film thickness. The cross-plane thermal conductivity of such SrBi2Nb2O9 films was measured in the 100-300 K temperature range by the 3 omega method and it was observed that the thermal properties of this family of ferroelectric materials show a glasslike behavior. The measurements performed on a polycrystalline bulk SrBi2Nb2O9 sample, in the 10-300 K temperature range, led to identical conclusions. The origin of this unexpected glasslike behavior is discussed

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supporting

confidence: 78%

Thermal conductivity of SrBi2Nb2O9 ferroelectric thin films

Boffoue

Jacquot

Duclère

et al. 2006

Applied Physics Letters

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“…The effect of composition of the precursor solutions on the formation of SBT films prepared by CSD has been previously studied by other authors. 18,19 Compositions with small deviations of strontium and/or bismuth from the stoichiometric one (SrBi 2 Ta 2 O 9 ) can give rise to the formation of second phases. SBT precursor solutions containing stoichiometric Bi and a large Sr defect can lead to SBT films with bismuth tantalate, BiTaO 4 , as second phase.…”

Section: Discussionmentioning

confidence: 99%

Crystallization, Heterostructure, Microstructure, and Properties of Ferroelectric Strontium Bismuth Tantalate Films Derived from Tantalum Glycolate Solutions

et al. 2003

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Strontium bismuth tantalate (SBT) films were prepared by chemical solution deposition (CSD) onto Pt/TiO 2 /SiO 2 /(100)Si substrates. Nominal chemical compositions of the precursor solutions of SrBi 2 Ta 2 O 9 , SrBi 2.2 Ta 2 O 9 , Sr 0.8 Bi 2 Ta 2 O 9 , and Sr 0.8 Bi 2.2 Ta 2 O 9 were tested for the deposition of the films. Crystallization of the films was carried out by a two-step process (TS) or a single-step process (SS). The TS treatment consisted of thermal treatment of the films in oxygen atmosphere at 550°C for 7200 s, with a heating rate of 8°C/s, followed by a rapid thermal processing (RTP) in oxygen at a temperature of 650°C for 3600 s, using a heating rate of 200°C/s. The SS process was just the RTP treatment of the films. The X-ray diffraction (XRD) patterns of the crystalline films showed the formation of the layered perovskite together with a second phase. Analysis of the films by means of Rutherford backscattering spectroscopy (RBS) showed that this second phase was placed at the interface and it was formed by the reaction of the film and the substrate. Composition and thickness of this interface as well as profile composition of the SBT layer were also analyzed by RBS. These studies indicated that the heterostructure of the films was related with their nominal composition and with the type of thermal treatment used for their crystallization. Both parameters, composition and treatment, also determined the surface microstructures of the films. Dielectric and ferroelectric properties of the films were measured and related with their composition, heterostructure, and microstructure. The best hysteresis loops with the maximum values of remanent polarization, P r , were obtained for the films with nominal composition of Sr 0.8 Bi 2.2 Ta 2 O 9 and crystallized with the SS treatment. These films have a low fatigue up to ∼10 11 cycles, a retention of the polarization over 10 5 seconds, and leakages of <10 -7 µA/cm 2 at 300 kV/cm.

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“…There were reports that SBT films grown by PLD using a stoichiometric target generally showed Bi deficiency 9 and that excess Bi could promote crystallization of SBT phase. 10 Therefore, SBT and BTT targets were prepared by the solid reaction method with 15% excess Bi 2 O 3 . The sintering temperature of the SBT and the BTT targets were 1100 and 900°C, respectively.…”

Section: ͓S0003-6951͑99͒02243-3͔mentioning

confidence: 99%