Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes

Abstract

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias J. Appl. Phys. 110, 094513 (2011) Temperature-dependence of the internal efficiency droop in GaN-based diodes Appl. Phys. Lett. 99, 181127 (2011) Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes Appl. Phys. Lett. 99, 181116 (2011) Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electronblocking layer J. Appl. Phys. 110, 093104 (2011) A light emitting diode based photoelectrochemical screener for distributed combinatorial materials discovery Rev. Sci. Instrum. 82, 114101 (2011) Additional information on J. Appl. Phys. Microstructural and electroluminescence measurements are carried out on boron implanted dislocation engineered silicon light emitting diodes (LEDs) co-implanted with the rare earth thulium to provide wavelength tuning in the infra-red. Silicon LEDs operating in the range from 1.1-1.35 lm are fabricated by co-implantation of boron and thulium into n-type Si (100) wafers and subsequently rapid thermally annealed to activate the implants and to engineer the dislocation loop array that is crucial in allowing light emission. Ohmic contacts are applied to the p and n regions to form conventional p-n junction LEDs. Electroluminescence is obtained under normal forward biasing of the devices. The influence of implantation sequence (B or Tm first), ion dose, and the post-implantation annealing on the microstructure and electroluminescence from the devices is studied. A clear role of the heavy-ion Tm co-implant in significantly modifying the boron induced dislocation loop array distribution is demonstrated. We also identify the development of dislocation loops under thermal spikes upon heavy ion (Tm) implantation into Si. The results contribute to a better understanding of the basic processes involved in fabrication and functioning of co-implanted devices, toward achieving higher light emission efficiency.

Light emission from rare-earths in dislocation engineered silicon substrates

“…Light emission due to the Tm 3+ internal transitions is not observed from these higher doses implanted samples, showing the paramount importance of boron induced loops in the p-n junction. 33) Higher temperature annealing, in addition to repairing the lattice damage due to ion implantation, can also induce the formation of REs complexes with residual impurities in the substrate that become more mobile as the anneal temperature increases, thus reducing the concentration of optically active REs ions and quenching the luminescence, as seen in Fig. 2(b).…”

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

“…RTA激活离子注入杂质的过程会引入二次缺陷 [33][34][35][36] , 这不但会影响注入杂质的再分布, 还与其再失活现象 有关 [37] . 离子注入过程的射程末端(EOR)缺陷是一种 已被深入研究的二次缺陷 [38,39] .…”

Evolution of secondary defects in arsenic implanted Si

“…9) However, secondary defects often accompany the restoration of the damages during a RTA process. [10][11][12][13] It is known that secondary defects not only strongly influence the distribution of dopant atoms but also are related to the deactivation phenomenon of dopant atoms. 3,10,11,[14][15][16][17][18] Dislocations in end of range (EOR) are one type of secondary defects in ion-implanted Si wafers and were well studied.…”