2013
DOI: 10.1016/j.colsurfa.2013.03.046
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Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions

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Cited by 34 publications
(50 citation statements)
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“…These particles were also used and described in our earlier investigations. 18,19 The oxide RRs were determined by measuring the thickness of the films before and after polishing using a Filmetrics F-20 interferometer. The RRs were calculated from the average of the change in the thickness measured at 20 points across a diameter of the wafer, and the standard deviation reported was based on the data from total of 40 locations obtained from two different polished wafers.…”
Section: Methodsmentioning
confidence: 99%
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“…These particles were also used and described in our earlier investigations. 18,19 The oxide RRs were determined by measuring the thickness of the films before and after polishing using a Filmetrics F-20 interferometer. The RRs were calculated from the average of the change in the thickness measured at 20 points across a diameter of the wafer, and the standard deviation reported was based on the data from total of 40 locations obtained from two different polished wafers.…”
Section: Methodsmentioning
confidence: 99%
“…19,23,24,39,40 The mechanism of high oxide and low nitride RRs was correlated to the difference in the adsorption behavior of these various additives on the oxide, nitride and ceria surfaces.…”
Section: P39mentioning
confidence: 99%
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“…Penta et al 31 investigated silicon dioxide and silicon nitride removal in ceria based slurries, in the presence of picolinic acid, nicotinic acid, proline and γ-amino butyric acid as a function of pH and additive concentration. These amino acids, based on pKa values, can exist in different forms in different pH ranges.…”
Section: Mechanismsmentioning
confidence: 99%