Role of thermosolutal convection in liquid phase electroepitaxial growth of gallium arsenide

Time dependent simulations of the growth of III–V crystals by the liquid phase electroepitaxy

“…Subsequently, such conclusions were confirmed by one-dimensional calculations of mass and heat transport [6]. However, the above analysis was oversimplified to get insight into real experimental conditions, in particular, presence of convection and real geometry of the growth system [7]. Therefore, the aim of the present work is to use two-dimensional time dependent simulations in order to study the relative role of various modes of transport, the growth rates and a possible extinction of the growth stimulus.…”

Liquid phase electroepitaxy of semiconductors under static magnetic field

“…One-dimensional and simple models are not sufficient for a full understanding of various aspects of the LPEE growth process. To gain a better understanding of the growth process of LPEE, over the past 10 years a number of numerical simulation modelling studies have been carried out by the author's research group (see for instance [34][35][36][39][40][41]46,[48][49][50][61][62][63][70][71][72][73].…”

A model for epitaxial lateral overgrowth of GaAs by liquid-phase electroepitaxy

“…1. Although the effect of Peltier cooling [25,26] at the growth interface is not taken into account, a very small temperature difference along the solution height is considered for computational convenience. The solution height is chosen to be 1.5 mm, above which all the variable fields are assumed to be uniform.…”

“…The LPEE process is quite complex and involves the interactions of various thermomechanical, electromagnetic, and chemical phenomena [25][26]. However, it offers unique possibility to control growth kinetics and properties of crystals produced.…”