Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

Ruan, Dun-Bao; Liu, Po–Tsun; Gan, Kai Jhih; Chiu, Yu-Chien; Hsu, Chih Chieh; Sze, Simon M.

doi:10.1063/1.5142557

Cited by 32 publications

(20 citation statements)

References 22 publications

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“…Advanced electronic devices and integrated circuits (ICs) are crucial for applications working in nuclear energy industries and space, leading to the increased demand for transistors with excellent radiation hardness in recent years. − Solution processing is a promising thin-film deposition method for large-area rad-hard applications such as wearable X-ray detectors, antenna arrays, and flexible materials for space suits or robots . Compared to traditional methods, the advantages of the solution process are that it is simple, low cost, atmosphere processable, and high throughput. − As a result, solution processing is appropriate for large-area flexible thin-film transistor (TFT) fabrication.…”

Section: Introductionmentioning

confidence: 99%

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

Fang

Zhao

Mitrović

et al. 2021

ACS Appl. Mater. Interfaces

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Radiation hardness is important for electronics operating in harsh radiation environments such as outer space and nuclear energy industries. In this work, radiation-hardened solution-processed ZrLaO thin films are demonstrated. The radiation effects on solution-processed ZrLaO thin films and InO x /ZrLaO thin-film transistors (TFTs) were systemically investigated. The Zr0.9La0.1O y thin films demonstrated excellent radiation hardness with negligible roughness, composition, electrical property, and bias-stress stability degradation after radiation exposure. The metal-oxide-semiconductor capacitors (MOSCAPs) based on Zr0.9La0.1O y gate dielectrics exhibited an ultralow flat band-voltage (V FB) sensitivity of 0.11 mV/krad and 0.19 mV/krad under low dose and high dose gamma irradiation conditions, respectively. The low dose condition had a 103 krad (SiO2) total dose and a 0.12 rad/s low dose rate, whereas the high dose condition had a 580 krad total dose and a 278 rad/s high dose rate. Furthermore, InO x /Zr0.9La0.1O y thin-film transistors (TFTs) exhibited a large I on/I off of 2 × 106, a small subthreshold swing (SS) of 0.11 V/dec, a small interface trap density (D it) of 1 × 1012 cm–2, and a 0.16 V threshold shift (ΔV TH) under 3600 s positive bias-stress (PBS). InO x /Zr0.9La0.1O y TFT-based resistor-loaded inverters demonstrated complete swing behavior, a static output gain of 13.3 under 4 V V DD, and an ∼9% radiation-induced degradation. Through separate investigation of the radiation-induced degradation on the semiconductor layer and dielectric layer of TFTs, it was found that radiation exposure mainly generated oxygen vacancies (Vo) and increased electron concentration among gate oxide. Nevertheless, the radiation-induced TFT instability was mainly related to the semiconductor layer degradation, which could be possibly suppressed by back-channel passivation. The demonstrated results indicate that solution-processed ZrLaO is a high-potential candidate for large-area electronics and circuits applied in harsh radiation environments. In addition, the detailed investigation of radiation-induced degradation on solution-processed high-k dielectrics in this work provided clear inspiration for developing novel flexible rad-hard dielectrics.

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Section: Introductionmentioning

confidence: 99%

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

Fang

Zhao

Mitrović

et al. 2021

ACS Appl. Mater. Interfaces

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“…Thin-film transistors (TFTs) are becoming increasingly important due to their promising development potential and broad market in the high-end panel and flexible display. − Amorphous indium gallium zinc oxide (a-IGZO), out of diverse metal oxides, draws wide attention in the areas of TFTs. A-IGZO TFTs exhibit high optical transparency, high carrier mobility, and excellent uniformity, making it one of the most competitive candidates. − Although the manufacturing process of a-IGZO TFTs is relatively mature, lack of appropriate technology in realizing depletion-mode (DM) a-IGZO TFTs still limits the implementation of complementary-type circuits. Whereas, circuits constructed with single-type TFTs will consume relatively high power. − An effective method to address this predicament and facilitate the power reduction is to implement DM and enhancement-mode (EM) TFTs in the circuit-level design. − Heretofore, several approaches to acquire DM a-IGZO TFTs have been studied, including modulating the thickness of materials, anodic oxidation, employing different back-channel capping layers, or fluorination treatment. − Nevertheless, these techniques incur a significant increase in process complexity and the relatively high-temperature treatment may also affect device performance.…”

Section: Introductionmentioning

confidence: 99%

Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors

Chang

et al. 2021

ACS Appl. Mater. Interfaces

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Thin-film transistors (TFTs) have drawn widespread applications in the increasingly sophisticated display field. Despite the mature process of fabricating enhancement-mode TFTs, lack of facile methods to realize depletion-mode TFTs restrains the implementation of complementary-type circuits, which in turn leads to relatively high power. Here, the supercritical fluid technique is introduced to elaborately design and tune the interface, providing the opportunity for function-mode transformation of TFTs. By harnessing supercritical-assisted ammoniation (SCA) treatment, interfacial polarization induces negative shift of threshold voltage (from 0.2 to −9.8 V), which allows TFTs to remain normally on-state in the absence of complex capacitor-integrated circuits. This convenient technique, without an additional manufacturing process to achieve function-mode transformation, can thus enable the fabrication of comprehensive-mode TFTs under the same process. Furthermore, comprehensive optimizations in the mobility (increases from 2.08 to 17.12 cm 2 V −1 s −1 ), leakage current (reduces from 1.33 × 10 −11 to 2.22 × 10 −12 A), hysteresis (reduces from 11.2 to 0.2 V), and on/off current ratio (increases from 9.65 × 10 4 to 7.98 × 10 6 ) are achieved simultaneously. Based on conjoint analysis of electrical and material characterization, a reaction model is established for a clearer understanding of the interfacial polarization process. Overall, this lowtemperature SCA treatment offers an environmentally benign strategy to modulate the function mode of electronic devices via interfacial engineering and optimize device performance at the same time, exhibiting promise in promoting the implementation of complementary, low-power circuit.

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“…It is urgent to find an effective carrier suppressor to replace the Ga element. From many previous studies, tungsten (W) element doped IZO (InWZnO; IWZO) might be a novel candidate to lower manufacturing costs and even exhibit higher bond dissociation energy [ 9 , 10 , 11 ]. Furthermore, the distribution of oxygen vacancy in thin film affects not only the thin film transistor device, but also the oxide-based memory [ 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

et al. 2021

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In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 104 cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 104 s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.

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Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

Cited by 32 publications

References 22 publications

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

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