Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance

Abstract

The electrical properties of room-temperature bonded wafers made from materials with different lattice constants, such as p-GaAs and n-Si, p-GaAs and n-Si [both with an indium tin oxide (ITO) surface layer], and n-GaN and p-GaAs, were investigated. The bonded p-GaAs//n-Si sample exhibited an electrical interface resistance of 2.8 × 10−1 Ω·cm2 and showed ohmic-like characteristics. In contrast, the bonded p-GaAs/ITO//ITO/n-Si sample showed Schottky-like characteristics. The bonded n-GaN//p-GaAs wafer sample exhibited ohmic-like characteristics with an interface resistance of 2.7 Ω·cm2. To our knowledge, this is the first reported instance of a bonded GaN//GaAs wafer with a low electrical resistance.

Direct observation of contact potential distributions of wafer-bonded p-GaAs/n-GaN and p-GaAs/n-Si by scanning Kelvin probe force microscopy

“…The more detailed bonding process can be obtained from the work. 9) Finally, one p-GaAs/n-GaN bonding sample was split into small pieces and chose a sample with about 2 nm thickness bonding interface layer as sample A and the other sample with about 8 nm thickness bonding interface layer as sample B. We reported the observations about the structure of the bonding interface based on the HRTEM (FEI Talos F200 TEM).…”

“…5,6) It has been pointed out that potential barrier can be modified by such interface states at the interface. 4,7,8) In our recent work, 9) the bonded p-GaAs/n-Si sample exhibits an interface electrical resistance of 2.8 × 10 −1 Ω • cm 2 , and shows Ohmic-like characteristics during current-voltage (I-V ) measurement. Furthermore, the bonded p-GaAs/ITO//ITO/n-Si sample has Schottky-like characteristics in conjunction, while the bonded n-GaN/p-GaAs sample exhibits an Ohmic-like characteristic with an interface resistance of 2.7 Ω • cm 2 .…”

“…6,10,11) However, it is difficult to achieve the accurate C-V characteristics as the samples sometimes have un-measurable capacitances or even no capacitance. 9) As a significant characterization technique, scanning Kelvin probe force microscopy (KPFM) can map work function of samples and show the energy band alignment and built-in field distribution of samples. [12][13][14][15] This technique has been successfully applied for the electrical characterization of the surfaces and interfaces of semiconductors.…”

Fabrication of GaAs/SiO2/Si and GaAs/Si heterointerfaces by surface-activated chemical bonding at room temperature*

“…In this method, the wafer surface was irradiated by an FAB of Ar before bonding. Heterojunctions realized by SAB, such as Si/GaAs, [14] Si/InP, [16] Si/SiC, [17] Si/GaN, [18] GaAs/GaN, [19] LiNbO 3 /SiC, [20] and diamond/Si, [21] have been widely studied. In addition, the electrical properties of the bonding interface can be changed by annealing.…”

Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

“…The heterogeneous integration of various forms of inorganic materials (which encompasses growing numbers of material types) into one electronic system is based on group III-nitride compound semiconductors [17][18][19][20][21][22][23][24][25][26][27][28] . Examples include the following: on-chip frequency upconversion [29] , nanomechanical optical detection [30,31] , solid-state neutron detection [32][33][34] , piezoelectric resonators and electrical and harmonic generators [35][36][37][38][39][40] , strain-gated transistors (SGTs) [41] , multiple-valued logic (MVL) circuits [42] , single-photon emission [43][44][45] , water splitting [46][47][48][49][50][51] , solar-blind photodetection [52] , pressure [53] , gas [54] , pH [55] , sensors, white light generation from light-emitting diodes (LEDs) [56][57][58] and from laser diodes (LDs) [59] , metal-oxidesemiconductor field-effect transistors (MOSFETs) [60]…”