Room temperature electrically pumped silicon nano-light source at telecommunication wavelengths

Shakoor, Abdul; Savio, R. Lo; Cardile, Paolo; Portalupi, Simone Luca; Gerace, Dario; Welna, Karl; Boninelli, Simona; Franzò, G.; Priolo, F.; Krauss, Thomas F.; Galli, Mattéo; O’Faoláin, Liam

doi:10.1117/12.2004817

Cited by 10 publications

(14 citation statements)

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“…Photonic crystal (PC) slab cavities have been focus of intense research during the last two decades due to their unique properties to efficiently confine light at length scales close to the diffraction limit, and extremely low loss rates 1,2 . These features have allowed to study a wide variety of classical and quantum phenomena, where the linear and non-linear interactions between light and matter are effectively enhanced in the cavity region [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] . Broadly speaking, the strength of this enhancement grows with the local density of electromagnetic states, which is proportional to the quality factor of the cavity mode Q c , and inversely proportional to its mode volume V [21][22][23] .…”

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confidence: 99%

Global optimization of an encapsulated Si/SiO$_2$ L3 cavity for ultra-high quality factor

Vasco,

Savona

2019

Preprint

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We optimize a silica-encapsulated silicon L3 photonic crystal cavity for ultra-high quality factor by means of a global optimization strategy, where the closest holes surrounding the cavity are varied to minimize out-of-plane losses. We find an optimal value of Q c = 4.33 × 10 7 , thus setting a new record for encapsulated low-indexcontrast photonic crystal cavities. We also address the effects of structural imperfections on our optimal cavity design and predict an averaged Q c in the 2 million regime for state-of-the-art silicon fabrication tolerances.

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confidence: 99%

Global optimization of an encapsulated Si/SiO$_2$ L3 cavity for ultra-high quality factor

Vasco,

Savona

2019

Preprint

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“…They can support localized modes, which are properties of cavities, or waveguides . From such properties many optical devices can be built, including mainstream optical fibers , couplers/filters , and lasers . These devices acquire their functionality through internal trapping of light within, or cross‐coupling between, basic cavity/waveguide building blocks.…”

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confidence: 99%

Trapped photons at a Dirac point: a new horizon for photonic crystals

Xie

Jiang

Boardman

et al. 2014

Laser & Photonics Reviews

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Optical cavities and waveguides are essential building blocks of many modern optical devices. They rely upon photonic bandgaps, or total internal reflections, to achieve field confinement. Here a new phenomenon is reported of wave localization that is attributable to neither of the above light guiding mechanisms. It is found that what is known as the Dirac point within a photonic band structure can play the role of a photonic bandgap with the establishment of field confinement. The new localized mode occurs at a Dirac frequency that is beyond any complete photonic bandgap, and exhibits a unique algebraic profile. The features of this new wave localization will add new capabilities and more flexibility to the design techniques of novel photonic components and photonic chip architectures.

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“…As shown in Figure , we determine the MoTe 2 laser‐like emission power density to be approximately 1.6 mW/cm 2 (20 pW) with a pump power of 1.9 mW. Although this output power is weaker than that of other compact silicon lasers, we believe that our work represents the beginning of a new era, because there is considerable scope for improvement. For example, one could incorporate the MoTe 2 gain material directly into the waveguide material, thereby increasing the overlap factor further, or construct a distributed coupled‐cavity array‐type laser which would be able to draw on a larger gain volume, thus enabling potential applications in optical communications and interconnects.…”

Section: Examining Few‐layer Mote2 Laser‐like Emission Performancementioning

confidence: 75%

1305 nm Few‐Layer MoTe₂‐on‐Silicon Laser‐Like Emission

Fang

Liu

et al. 2018

Laser & Photonics Reviews

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The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser‐like emission is reported that employs few‐layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe2‐on‐silicon laser‐like emission at 1305 nm, i.e. in the center of the “O‐band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm2. The surprising insight is that, contrary to common understanding, a monolayer MoTe2 is not required to achieve higher efficiency laser‐like operation. Instead, few‐layer MoTe2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few‐layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D‐on‐silicon devices a step closer to becoming a scalable technology.

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Room temperature electrically pumped silicon nano-light source at telecommunication wavelengths

Cited by 10 publications

References 0 publications

Global optimization of an encapsulated Si/SiO$_2$ L3 cavity for ultra-high quality factor

Global optimization of an encapsulated Si/SiO$_2$ L3 cavity for ultra-high quality factor

Trapped photons at a Dirac point: a new horizon for photonic crystals

1305 nm Few‐Layer MoTe₂‐on‐Silicon Laser‐Like Emission

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Room temperature electrically pumped silicon nano-light source at telecommunication wavelengths

Cited by 10 publications

References 0 publications

Global optimization of an encapsulated Si/SiO$_2$ L3 cavity for ultra-high quality factor

Global optimization of an encapsulated Si/SiO$_2$ L3 cavity for ultra-high quality factor

Trapped photons at a Dirac point: a new horizon for photonic crystals

1305 nm Few‐Layer MoTe2‐on‐Silicon Laser‐Like Emission

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1305 nm Few‐Layer MoTe₂‐on‐Silicon Laser‐Like Emission