Room-Temperature Ferromagnetism in Carbon-Doped ZnO

Pan, Hui; Yi, Jiabao; Shen, Lei; Wu, Ronghui; Yang, Dao‐Wu; Lin, Jiunn Yuan; Feng, Yuan Ping; Ding, Jun; Van, L. H.; Yin, Jianhua

doi:10.1103/physrevlett.99.127201

Cited by 796 publications

(277 citation statements)

References 40 publications

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“…Despite these developments, magnetic-impurity-based DMS oxides are the subject of intense debate as a result of the many inconsistent results related to secondary phase formation, unknown impurities or substitutionality, solubility, clustering and/or segregation of the magnetic impurities in the host oxide matrix [16][17][18]. More recently, there have been reports of FM in ZnO and other oxides (attributed to anionic vacancies) by doping with non-magnetic ions, but besides evidence from superconducting quantum interference device (SQUID) data [13][14][15], a necessary but not sufficient criterion [17,18], there has been no reliable element-specific evidence for FM in these cases, with the exception of recent publications [19,20]. To establish true FM in the DMS oxides and to differentiate from impurity artefacts, various magnetic measurements-ranging from extremely sensitive SQUID and optical magnetic circular dichroism (OMCD) measurements, which directly probe the spin-polarized bands, to element-specific soft X-ray magnetic circular dichroism (SXMCD) measurements-are required.…”

Section: Introductionmentioning

confidence: 99%

“…The most reproducible carrier-induced FM in semiconductors is based on Mn doping of GaAs, but its Curie temperature, T C , is limited to about 173 K [3,7]. Among the oxides, the most notable compounds exhibiting DMS behaviour above RT are based on TiO 2 and ZnO [8][9][10][11][12][13][14][15]. Despite these developments, magnetic-impurity-based DMS oxides are the subject of intense debate as a result of the many inconsistent results related to secondary phase formation, unknown impurities or substitutionality, solubility, clustering and/or segregation of the magnetic impurities in the host oxide matrix [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

“…Because of the many potential applications in spintronics, magneto-optical and opto-electronic devices, extensive efforts are being made to introduce roomtemperature (RT) ferromagnetism (FM) into various wide-band-gap semiconducting oxides and III-V and II-VI based semiconducting systems [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Considerable success has been achieved in the production of dilute magnetic semiconductors (DMS) by introducing a magnetic impurity into a non-magnetic host material.…”

Section: Introductionmentioning

confidence: 99%

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Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti _{1−
x} Ta _x O ₂ ( x ∼0.05) thin films

Rusydi

Dhar

Barman

et al. 2012

Phil. Trans. R. Soc. A.

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We report room-temperature ferromagnetism (FM) in highly conducting, transparent anatase Ti 1−x Ta x O 2 (x ∼ 0.05) thin films grown by pulsed laser deposition on LaAlO 3 substrates. Rutherford backscattering spectrometry (RBS), X-ray diffraction, protoninduced X-ray emission, X-ray absorption spectroscopy (XAS) and time-of-flight secondary-ion mass spectrometry indicated negligible magnetic contaminants in the films. The presence of FM with concomitant large carrier densities was determined by a combination of superconducting quantum interference device magnetometry, * Authors for correspondence (phyandri@nus.edu.sg; eleds@nus.edu.sg; venky@nus.edu.sg). † These authors contributed equally to this work. electrical transport measurements, soft X-ray magnetic circular dichroism (SXMCD), XAS and optical magnetic circular dichroism, and was supported by first-principles calculations. SXMCD and XAS measurements revealed a 90 per cent contribution to FM from the Ti ions, and a 10 per cent contribution from the O ions. RBS/channelling measurements show complete Ta substitution in the Ti sites, though carrier activation was only 50 per cent at 5 per cent Ta concentration, implying compensation by cationic defects. The role of the Ti vacancy (V Ti ) and Ti 3+ was studied via XAS and X-ray photoemission spectroscopy, respectively. It was found that, in films with strong FM, the V Ti signal was strong while the Ti 3+ signal was absent. We propose (in the absence of any obvious exchange mechanisms) that the localized magnetic moments, V Ti sites, are ferromagnetically ordered by itinerant carriers. Cationic-defect-induced magnetism is an alternative route to FM in wide-band-gap semiconducting oxides without any magnetic elements.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti _{1−
x} Ta _x O ₂ ( x ∼0.05) thin films

Rusydi

Dhar

Barman

et al. 2012

Phil. Trans. R. Soc. A.

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“…In the second case, Straumal et al have proposed the concept of specific grain boundary area and its influence/role in terms of magnetic foam model to explain RTFM in nanograined Mn doped ZnO [15]. More complexity is very recently introduced by the observation of RTFM behavior in carbon doped ZnO [16,17]. Pan et al reported RTFM in carbon doped ZnO Films deposited by pulsed laser deposition with Curie temperature higher than 400K and this ferromagnetism is due to Zn-C system in the ZnO environment [16].…”

Section: Resultsmentioning

confidence: 99%

Structural and Magnetic Behavior of Mn Doped Zno Synthesized By Soft Chemical Route

Bhandarkar¹

2014

IJIRSET

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Nanocrystalline undoped and 5% Mn doped ZnO powders are synthesized by sol-gel route using constituent nitrate and citrate precursors. The physico-chemical characterizations of powders calcined at various temperatures (400-1100 ˚C), are performed using techniques (XRD and SQUID) to study structural, nano/microstructural, and magnetic properties. XRD patterns clearly revealed the evolution of major wurtzite (ZnO) and minor non-stoichiometric defect cubic spinel phase of ZnMnO 3- . Unexpectedly, the magnetic hysteresis loop with its large magnetic parameters are observed at room temperature as soon as the concentration of the minor phase is large enough. The analysis of the unusual room temperature ferromagnetic behavior is presented in this communication based on the dominant contributions of the secondary nanocrystalline non-stoichiometric defect cubic spinel phase of ZnMnO 3- .KEYWORDS: Diluted magnetic semiconductor, soft chemical route, Mn doped ZnO, Room temperature ferromagnetism I. INTRODUCTION In the recent past, a surge of interest is observed in the studies of diluted magnetic semiconductor (DMS) oxides due to simultaneous utilization of charge and spin of electrons in a single material to develop new functionalities [1][2][3][4]. These DMSs are potential candidates for technological application such as spintronic devices. Recently, this class of materials is studied extensively for better understanding of basic mechanisms of different types of magnetic interactions in diluted system. Among these materials, we focused our attention on undoped and doped ZnO based DMS. Dietl et al reported room temperature ferromagnetic (RTFM) behavior arising from carrier mediated exchange interaction has been predicted for several transition metal (Mn, Fe, Co, etc) doped ZnO and GaN DMSs. [2]. The large amount of experimental work on Mn doped ZnO based DMSs has been reported in literature with contradictory experimental results in favor of RTFM [5][6][7] when processed at lower temperature and against of RTFM [8,9] when processed at higher temperature. Similar results are obtained in different product (bulk and nanoparticles) forms prepared by different synthesis along with different processing parameters [5][6][7][8][9]. In spite of the tremendous amount of experimental work, the origin of RTFM behavior and the associated energy exchange interactions are not fully understood. In the present investigation, the RTFM behavior of sol-gel synthesized nanoparticles of 5% Mn doped ZnO is discussed in terms of secondary nanocrystalline defect cubic spinel (DCS) phase of ZnMnO 3- .

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“…[10] Experimentally, RT ferromagnetism was reported in C-doped ZnO and SnO 2 . [11,12] Theoretical studies reveal that holes in valence band play an important role in d 0 ferromagnetism. By doping impurities with weaker electronegativity or lower valence into semiconductors of oxide or nitride, holes are introduced into the valence band of semiconductors, which leads to band magnetization.…”

Section: Introductionmentioning

confidence: 99%

Density-Functional Study on the Origin of Ferromagnetism in Copper Doped Aluminium Nitride

Zhao¹

2015

Proceedings of the 2015 International Conference on Electrical, Automation and Mechanical Engineering

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Abstract-Recently, room-temperature ferromagnetism was reported in Cu-doped AlN film. However, a systematic study on the magnetic mediation of intrinsic vacancy is still absent and the origin of ferromagnetism of Cu-doped AlN remains unclear. We investigate the magnetic properties of Cu-doped AlN by firstprinciples calculations. Our results reveal that the ferromagnetism is very weak for Cu substitution only. However, both the anion and cation vacancies can mediate the ferromagnetism effectively. Under the N-poor conditions, the defect complex with N vacancy has much lower formation energy and the origin of ferromagnetism can be attributed to the Nvacancy mediated p-d hybridization.

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Room-Temperature Ferromagnetism in Carbon-Doped ZnO

Cited by 796 publications

References 40 publications

Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti _{1−
x} Ta _x O ₂ ( x ∼0.05) thin films

Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti _{1−
x} Ta _x O ₂ ( x ∼0.05) thin films

Structural and Magnetic Behavior of Mn Doped Zno Synthesized By Soft Chemical Route

Density-Functional Study on the Origin of Ferromagnetism in Copper Doped Aluminium Nitride

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Room-Temperature Ferromagnetism in Carbon-Doped ZnO

Cited by 796 publications

References 40 publications

Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti 1− x Ta x O 2 ( x ∼0.05) thin films

Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti 1− x Ta x O 2 ( x ∼0.05) thin films

Structural and Magnetic Behavior of Mn Doped Zno Synthesized By Soft Chemical Route

Density-Functional Study on the Origin of Ferromagnetism in Copper Doped Aluminium Nitride

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Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti _{1−
x} Ta _x O ₂ ( x ∼0.05) thin films

Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti _{1−
x} Ta _x O ₂ ( x ∼0.05) thin films