Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in <i>p</i>-InGaP and solar cells

Khan, Aurangzeb; Yamaguchi, Masafumi; Bourgoin, J. C.; Angelis, Nicola De; Takamoto, Tatsuya

doi:10.1063/1.126407

Cited by 46 publications

(21 citation statements)

References 11 publications

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“…Very recently 1 we have presented a direct observation of minority-carrier injection-enhanced annealing of the dominant radiation-induced hole trap labeled H2 located at 0.51-0.55 eV above the valance band, in p InGaP by deep level transient spectroscopy ͑DLTS͒. However, the mechanism involved in this recombination-enhanced defect reactions remains still an open question.…”

Section: Introductionmentioning

confidence: 97%

Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP

Khan

Yamaguchi

Bourgoin

et al. 2001

Journal of Applied Physics

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Direct recombination enhanced annealing of the radiation-induced defect H2 in p InGaP has been observed by deep level transient spectroscopy (DLTS). Detailed analysis of the annealing data at zero and reverse bias shows that annealing rates are independent of the defect charge state or this defect interacts with the two bands, i.e., is a recombination center trapping alternatively an electron, then a hole. An experiment based on minority carrier capture on a majority trap by the double carrier pulse DLTS technique further supports the evidence that H2 has a large minority carrier capture cross section and is an efficient nonradiative recombination center. Recombination-enhanced defect annealing rates obeys a simple Arrhenius law with an activation enthalpy of 0.51±0.09 eV, in contrast to athermal processes observed in GaP. Detailed analysis of results reveals that the mechanism involved in the minority carrier injection annealing of the H2 defect is energy release mechanism in which enhancement is induced by the energy which is released when a minority carrier is trapped on the defect site. Finally, analysis of the depth profiles data relates that H2 acts as a donor, which partially compensates the acceptors.

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Section: Introductionmentioning

confidence: 97%

Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP

Khan

Yamaguchi

Bourgoin

et al. 2001

Journal of Applied Physics

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“…Figure 14 shows DLTS spectrum of Trap H2 (Ev+0.55eV) with various time of injection at 25 0 C with an injection density of 100mA/cm 2 . It is also found [26] by DLTS measurement that major defect center H2 (Ev+0.55eV) recover by forward bias or light illumination. Moreover, the H2 center is confirmed to act as a recombination center by using the double carrier pulse DLTS method as shown in Fig.…”

Section: -Mev Electron Fluence (Cm -2 )mentioning

confidence: 91%

Defect Management of High Efficiency Multijunction, Space and Concentrator Solar Cells

et al. 2014

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III-V compound multi-junction solar cells have high efficiency potential of more than 50% due to wide photo response, while limiting efficiencies of single-junction solar cells are 31-32%. In order to realize high efficiency III-V compound multi-junction solar cells, understanding and controlling imperfections (defects) are very important. This paper reviews fundamentals of defects and defect management for III-V compound materials, single-junction, multi-junction, space and concentrator solar cells.

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“…Figure 7.23 shows DLTS (deep-level transient spectroscopy) spectra of the hole trap H2 (Ev+0.55 eV) for various injection times at 25 • C with a forward bias injection density of 100 mA cm −2 . Khan et al (2000) found from DLTS measurements that this major defect level recovers under forward bias or light illumination, i.e. the defect signal decreases with prolonged light exposure.…”

Section: Radiation Resistance Of Ingap-based Multijunction Solar Cellsmentioning

confidence: 95%