Room-temperature observation of the Coulomb blockade effects in Al two-terminal diodes fabricated using a focused ion-beam nanoparticle process

Kim, T. W.; Kang, Seung Oun; Choo, D. C.; Shim, Jun Ho

doi:10.1063/1.125930

Cited by 7 publications

(5 citation statements)

References 14 publications

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“…(1) its capability for rapid prototyping; as FIB milling requires neither master nor resist, it allows very rapid implementation of complex patterns [8]; (2) the sub-10 nm FIB spot size enables the patterning of diverse nanostructures at a very high resolution [9]; (3) its high depth of focus (300 µm for 100 nm resolution) allows the production of high-resolution patterns without refocusing or changing sample height; it also allows the patterning of curved substrates [10].…”

Section: Introductionmentioning

confidence: 99%

Focused ion beam fabrication of silicon print masters

Kang

Blamire

et al. 2003

Nanotechnology

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In this work, we present a method for targeted and maskless fabrication of single silicon vacancy (V Si) defect arrays in silicon carbide (SiC) using focused ion beam. Firstly, we studied the photoluminescence (PL) spectrum and optically detected magnetic resonance (ODMR) of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single V Si defects and our measurements indicate the presence of a photostable single photon source. Finally, we find that the Si ++ ion to V Si defect conversion yield increases as the implanted dose decreases. The reliable production of V Si defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing. The resolution of implanted V Si defects is limited to a few tens of nanometers, defined by the diameter of the ion beam. Silicon carbide (SiC) is a technologically mature semiconductor material, which can be grown as inch-scale high-quality single crystal wafers and has been widely used in microelectronics systems and high-power electronics, etc. In recent years, some defects in SiC have been successfully implemented as solid state quantum bit 1-8 and quantum photonics 9-11. They meet essential requirements for spin-based quantum information processing such as optical initialization, readout and microwave control of the spin state, which are similar as the nitrogen vacancy (NV) centers in diamond. 12 In particular, silicon vacancy (V Si) defect in 4H-SiC has increasingly attracted attention owing to its excellent features, such as non-blinking single photon emission and long spin coherence times which persist up to room temperature (about 160 µs). 3,5,13 These remarkable properties have been exploited in many applications in quantum photonics, 9,10 and quantum metrological studies such as high sensitivity magnetic sensing 14,15 and temperature sensing. 16 The V Si defect consists of a vacancy on a silicon site which exhibits a C 3v symmetry in 4H-SiC. 3,5 In order to extend its applications in quantum information science, it is essential to develop the technique of scalable efficient generation of single V Si defect arays in 4H-SiC. Since the collected fluorescence rate of a single V Si defect is modest with only about 10 kcps, 3,5,17 it is required to couple with some photonic devices to improve the counts towards the construction of photonics networks. 3,9,10,17,20 However, in order to realize the mode-maximum of photonic devices, it is necessary to place the V Si defects relative to the optimal position with sub-wavelength-scale precision. Previously there are three methods to generate V Si defect: the electron irradiation, neutron irradiation, and carbon implantation, however, these methods either can't control the position of the V Si defect, or need a electron beam lithography (EBL) prefabricated photoresist patterned mask, 3,5,9,17 which is not convenient for coupling to prefabricated photonic devices. To solve t...

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Section: Introductionmentioning

confidence: 99%

Focused ion beam fabrication of silicon print masters

Kang

Blamire

et al. 2003

Nanotechnology

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“…The home-made FIB system could generate a relatively low-energy beam with its liquid-metal-ion source of Ga ϩ ions and had twolens postlens deflection beam optics for achieving high maneuverability for focusing the beam on the specimen. 16 The Ga ϩ ion-beam energies of the ion implantation for the lithography and the ion sputtering for the nanoparticle formation were 15 and 10 keV, respectively. The ion implantation in the sample took place at normal incidence to the Si͑100͒ surface to maximize ion channeling.…”

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confidence: 99%

Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam

Kim

Choo

Shim

et al. 2002

Applied Physics Letters

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Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor Single charge detection in capacitively coupled integrated single electron transistors based on single-walled carbon nanotubes Appl. Phys. Lett. 101, 123506 (2012) Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire Appl. Phys. Lett. 101, 103504 (2012) A few-electron quadruple quantum dot in a closed loop

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“…Alternative approaches to achieve these effects at room temperature include silicon nanocrystal floating gate devices [5] and focused ion beam deposited structures. [6] Another involves assemblies of metal or semiconductor nanoparticles that have well-defined dimensions down to the molecular scale. At these sizes the inherent capacitance of the system is small enough that single-electron effects are manifest at room temperature.…”

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confidence: 99%

“…Recent progress in the synthesis and characterization of nanowires has been driven by the need to understand the novel physical properties of one-dimensional nanoscale materials, and their potential application in constructing nanoscale electronic and optoelectronic devices. [1] Nanowires with different compositions have been explored using various methods including the vapor-phase transport process, [2±4] chemical vapor deposition, [5] arc discharge, [6] laser ablation, [7] solution, [8,9] and a template-based method. [10,11] While a large part of this work has been focused on semiconductor systems such as Si, [1] Ge, [2] GaN, [3,10] GaAs, [5,7] only a few studies on oxide systems exist in the literature.…”

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confidence: 99%

“…Among them, MgO nanowires have been synthesized and incorporated into high-temperature superconductors to improve the critical current densities of the superconductors. [12,13] Several other oxide nanowires, including SiO 2 , [14] GeO 2 , [4] and Ga 2 O 3 , [6] have also been reported although the insulating nature of these oxide systems could limit, if any, their applications. It is thus necessary to look into other oxide systems with interesting optical, electrical, and magnetic properties.…”

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confidence: 99%

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Defect-Tolerant Single-Electron Charging at Room Temperature in Metal Nanoparticle Decorated Biopolymers

et al. 2001

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Gold nanoparticles assembled on a biopolymer template (see Figure) between metal electrodes on an insulating substrate are shown to exhibit unambiguous single electron charging effects that are found to depend on the nanoparticle properties and the geometrical contraints imposed by the biopolymer. The results support the idea of using nanoparticles in conjuction with biomolecular organization to produce nanoscale systems with defect‐tolerant current–voltage behavior.

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Room-temperature observation of the Coulomb blockade effects in Al two-terminal diodes fabricated using a focused ion-beam nanoparticle process

Cited by 7 publications

References 14 publications

Focused ion beam fabrication of silicon print masters

Focused ion beam fabrication of silicon print masters

Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam

Defect-Tolerant Single-Electron Charging at Room Temperature in Metal Nanoparticle Decorated Biopolymers

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