Room-temperature-operated infrared image CCD sensor using pyroelectric gate coupled by dielectric connector

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p+-SiGe layers on p−-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during molecular beam epitaxy (MBE) growth, and high doping concentrations (≳5×1020 cm−3) have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature (350 °C), resulting in improved crystalline quality and smooth surface morphology of the Si0.7Ge0.3 layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

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Room-temperature-operated infrared image CCD sensor using pyroelectric gate coupled by dielectric connector

Cited by 9 publications

References 6 publications

Ferroelectric Thin Films and Thin Film Devices

Ferroelectric Thin Films and Thin Film Devices

Pyroelectric infrared image sensors using Si CCD and FET arrays

Elemental boron-doped p+-SiGe layers grown by molecular beam epitaxy for infrared detector applications

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