Room Temperature Photo-Luminescence Imaging of Dislocations in GaAs Wafers

Spatially Resolved Non-Contact Bulk and Surface Photovoltage Response in Semiconductors

“…7. One can readily recognize the typical cellular dislocation network which can also be observed by photo-luminescence [16][17] , X-ray topography, etch pit pattern, and near-infrared absorption (18). In the latter measurements, absorption is thought to be due to EL2 impurity states [15,18) which congregate, by intrinsic gettering, to the high dislocation density regions of cell walls.…”