Room Temperature Processed Ultrahigh-Frequency Indium-Gallium–Zinc-Oxide Schottky Diode

Air Stable Indium-Gallium-Zinc-Oxide Diodes With a 6.4 GHz Extrinsic Cutoff Frequency Fabricated Using Adhesion Lithography

“…Previous Schottky diodes that have used a-IGZO as the active material have shown good air stability and high rectification ratios (10 6 -10 8 ) [7]- [9]. Devices that have specifically designed architecture and optimized layers of a-IGZO have shown extrinsic cut-off frequencies from 1-4.2 GHz [10]- [12].…”

Influence of interface inhomogeneities in thin-film Schottky diodes

“…These efforts have led to the realisation of excellent electronic properties such as rectification ratios > 10 7 , barrier heights > 0.9 eV and ideality factors close to unity. Notable achievements include fabricating devices on flexible substrates [9], exhibiting gigahertz operating frequencies [12,13] Unlike TFTs, where scaling phenomena such as the short-channel effect are well documented [19,20], the effects of device scalability on IGZO Schottky diodes has received limited attention. So far, studies of IGZO Schottky diodes have been focused on the forward current, except work regarding the reverse breakdown voltage [21].…”

“…These efforts have led to the realisation of excellent electronic properties such as rectification ratios > 10 7 , barrier heights > 0.9 eV and ideality factors close to unity. Notable achievements include fabricating devices on flexible substrates [9], exhibiting gigahertz operating frequencies [12,13] and the combination of these two [14], thus demonstrating the potential of IGZO Schottky diodes for applications in future mobile technology. IGZO Schottky junctions have also found use in other thin-film device architectures and applications including metal-semiconductor field-effect transistors (MESFETs) [15], memory storage [16,17] and energy harvesting [18].…”

8.4: Invited Paper: Oxide devices for displays and low power electronics

“…By further optimizing the IGZO thickness, the highest intrinsic cut-off frequency obtained from S-parameters is 16.7 GHz on glass substrates, as shown in Figure 1(d), and 6.3 GHz on flexible substrates, as shown in Figures 1(e) and 1(f). By optimizing the active area of the diode, the cut-off frequency is further improved beyond 20 GHz [2] . By integrating the GHz operating IGZO Schottky diodes with TFTs, a range of wireless devices using oxide semiconductors can be constructed.…”

“…Here, we review our recent work on a) high-performance oxidebased Schottky diodes with an ideality factor of 1.09, ultra-low noise, and operating speed >20 GHz on glass [2] and 2.45 GHz on flexible substrate [3] ; b) IGZO TFTs capable of reaching a benchmark speed of 1 GHz [4] , which are, to the best of our knowledge, the fastest oxide-based diodes and transistors to date; c) a few different methods to achieve IGZO TFTs capable of onevolt operations [5][6][7][8][9] ; d) CMOS-like oxide logic gates and functional circuits including inverters with a gain up to 150 [10,11] , NAND gate [12] , D-latch [13] , 51 stage ring oscillator [13] , complementary static random access memories [14] , and a one-bit full adder [13] , etc, by integrating SnO-based p-type TFTs with IGZO-based n-type TFTs; and finally e) novel oxide TFTs with a Schottky source contact that show no short channel effect, almost total immunity to negative bias illumination stress, and have a gain over two orders of magnitude higher than that of a typical silicon transistor [15] .…”