Air Stable Indium-Gallium-Zinc-Oxide Diodes With a 6.4 GHz Extrinsic Cutoff Frequency Fabricated Using Adhesion Lithography

Abstract

High speed rectifiers that can be fabricated at low cost whilst still maintaining a high performance are of interest for wireless communication applications. In this letter amorphous indium gallium zinc oxide (a-IGZO) has been used with adhesion lithography (a technique to create asymmetric planar electrodes separated by a nanogap) to fabricate high performance Schottky diode rectifiers. The diode area and junction capacitance can be significantly reduced using this technique, improving device cutoff frequencies. Devices of different widths have been fabricated showing rectification ratios between 10 3-10 4. Capacitances measured for devices of various sizes were all on the order of 0.1 pF. By applying ac signals to the diode and measuring the output voltage across a load resistor a cutoff frequency was found. a-IGZO diodes with an extrinsic cutoff frequency of 6.4 GHz at a 15 dBM input power have been realized. The devices also show good air stability with little change in current-voltage characteristics after 12 months.

Nanodiodes on a Digestible Substrate

“…5(b) possess some hysteresis and a rectification ratio of 10 3 . These devices do not have as high a performance compared to previous work where a-IGZO devices on glass were annealed at 200 °C and had a rectification ratio of 10 4 with no hysteresis but do show good diode like behavior without the need for annealing [22]. The hysteresis in these devices is due to a lack of annealing and is likely due to defects in the IGZO film.…”

Rapid and up-scalable manufacturing of gigahertz nanogap diodes

“…The large difference observed between the intrinsic and the extrinsic f C values are most likely attributed to parasitic losses associated with the rectifier circuit employed 5 , and highlight the possibility for further improvements. Despite the nonidealities, the extrinsic f C of our diodes surpass those achieved previously using different processing technologies and/or semiconductor materials, such as solution-processable metal oxides 5 , 7 , 9 , 19 – 22 , organic polymers 23 – 26 , organic small-molecules 27 – 30 , and various low-dimensional semiconductors 4 , 31 . Figure 5 summarizes the most important developments over the years in the area of emerging Schottky diodes technologies with the details of each study listed in Supplementary Table 4 .…”

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

“…The final devices presented an effective mobility of 4 cm 2 V −1 s −1 and a negligible overlap length, given that this value was determined by the thickness of the contacts. Additionally, the same technique has also been used to fabricate 10 nm gap IGZO Schottky diodes with an extrinsic cutoff frequency of 6.4 MHz on rigid substrates, demonstrating its potential for the fabrication of large-area sub-micron channels [115].…”