Room Temperature Silicon Spin-Based Transistors

Cahay, M.; Bandyopadhyay, S.

doi:10.1007/978-0-387-78689-6_6

Cited by 2 publications

(2 citation statements)

References 52 publications

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“…Owing to its apparent advantages over other semiconductors, many groups tried to demonstrate phenomena attributed to spin transport in Si [31][32][33][34][35][36][37][38][39], but this was typically done with ohmic FM-Si contacts and two-terminal magnetoresistance measurements or in transistor-type devices [40,41], which are bound to fail owing to the 'fundamental obstacle' for ohmic spin injection mentioned in §1 [1][2][3][4]. Although weak spin-valve effects are often presented, no evidence of spin precession is available so the signals measured are ambiguous at best [42,43].…”

Section: Spins In Siliconmentioning

confidence: 99%

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Appelbaum

2011

Phil. Trans. R. Soc. A.

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Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plague spin injection attempts in semiconductors using ferromagnetic ohmic contacts. Through the spin dependence of the mean free path in ferromagnetic thin films, it also provides a means for spin detection after transport. Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. An appropriate quantitative model that accurately simulates the device characteristics for both undoped and doped spin transport channels is described; it can be used to recover the transit-time distribution from precession measurements and determine the spin current velocity, diffusion constant and spin lifetime, constituting a spin 'HaynesShockley' experiment without time-of-flight techniques. A perspective on the future of these methods is offered as a summary.

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Section: Spins In Siliconmentioning

confidence: 99%

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Appelbaum

2011

Phil. Trans. R. Soc. A.

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“…Spin MOSFETs, 1,2) in which the source and drain are ferromagnetic materials, are promising devices because of their compatibility with existing semiconductor technologies and their applicability to non-volatile logic systems. [3][4][5][6][7] In comparison with other spintronics devices proposed so far, the amplification capability of spin MOSFETs is a distinctive characteristic and is indispensable for integrated circuit applications. The basic requirement for the operation of spin MOSFETs is to control the current by both the gate voltage and the magnetization configuration; however, spin relaxation, which occurs at the ferromagnet/ semiconductor interfaces and in the channel, has been a major obstacle, leading to extremely low magnetoresistance (MR) ratios of less than ∼0.1% at RT.…”

mentioning

confidence: 99%

Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation

Kanaki

Matsumoto

Narayananellore

et al. 2019

Appl. Phys. Express

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Realizing spin MOSFETs is essential for non-volatile high-speed electronics; however, obtaining practically large magnetoresistance (MR) is challenging because of the difficulties of growing high-quality single-crystalline ferromagnet/semiconductor heterostructures and of obtaining efficient gate modulation. In this study, for realizing a vertical spin MOSFET, we demonstrate side-gate-induced current modulation in a magnetic tunnel junction composed of Fe electrodes and an oxide semiconductor GaOx barrier at RT. We show gate modulation of the current up to ∼10% and a MR ratio up to 40%, which is larger than that obtained at RT in previous spin-valve devices targeted for spin MOSFETs (∼0.1%).

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Room Temperature Silicon Spin-Based Transistors

Cited by 2 publications

References 52 publications

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation

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