Room-temperature single-electron transistors using alkanedithiols

Luo, Kang; Chae, Dong Hun; Yao, Zhen

doi:10.1088/0957-4484/18/46/465203

Cited by 29 publications

(24 citation statements)

References 32 publications

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“…[ 48 ] Unintentional metal debris in the gap interferes with the insertion of the molecules of interest and can mask the intrinsic molecular signals. [49][50][51][52] Careful correlation of spectroscopies can be used to eliminate the presence of metal islands. Recently, a few groups have prepared electromigrated nanogaps on free-standing transparent SiN x membranes to permit the use of transmission electron microscopy (TEM) to image the nanogap formation in situ (Figure 3 b).…”

Section: Break Junctionsmentioning

confidence: 99%

Single Molecule Electronic Devices

2011

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Single molecule electronic devices in which individual molecules are utilized as active electronic components constitute a promising approach for the ultimate miniaturization and integration of electronic devices in nanotechnology through the bottom-up strategy. Thus, the ability to understand, control, and exploit charge transport at the level of single molecules has become a long-standing desire of scientists and engineers from different disciplines for various potential device applications. Indeed, a study on charge transport through single molecules attached to metallic electrodes is a very challenging task, but rapid advances have been made in recent years. This review article focuses on experimental aspects of electronic devices made with single molecules, with a primary focus on the characterization and manipulation of charge transport in this regime.

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Section: Break Junctionsmentioning

confidence: 99%

Single Molecule Electronic Devices

2011

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“…14 The effect of the gate voltage can also be observed in Figure 3(b) for Au nanoparticles linked by alkanedithiols (the inset shows the current as a function of gate voltage at different temperatures). 18 Finally, Figure 3(c) shows the I-V curves of an isolated Au MPC with an average size of 3.7 nm. 6 The single-electron charging features at T = 300 K are illustrated by both the experimental data (points) and the theoretical curve of the inset, which is based on the SET model and the orthodox theory.…”

Section: Experimental Characteristicsmentioning

confidence: 99%

“…(a) Current as a function of gate voltage for two different STM tip-addressed clusters at 300 K. 14 (b) I-V curve at different gate voltages for Au nanoparticles linked by alkanedithiols at T = 4 2 K. The inset shows the current as a function of gate voltage at temperatures from 4.2 K to 39 K and fixed bias voltage 18. (c) I-V curves of an isolated Au MPC at 300 K (points, graph a) and the theoretical fit (curve, graph b) based on the SET model in the right inset.…”

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confidence: 99%

Information Processing Schemes Based on Monolayer Protected Metallic Nanoclusters

Cervera¹,

Mafé²

2011

J. Nanosci. Nanotech.

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Nanostructures are potentially useful as building blocks to complement future electronics because of their high versatility and packing densities. The fabrication and characterization of particular nanostructures and the use of new theoretical tools to describe their properties are receiving much attention. However, the integration of these individual systems into general schemes that could perform simple tasks is also necessary because modern electronics operation relies on the concerted action of many basic units. We review here new conceptual schemes that can allow information processing with ligand or monolayer protected metallic nanoclusters (MPCs) on the basis of the experimentally demonstrated and theoretically described electrical characteristics of these nanostructures. In particular, we make use of the tunnelling current through a metallic nanocluster attached to the electrodes by ligands. The nanostructure is described as a single electron transistor (SET) that can be gated by an external potential. This fact permits exploiting information processing schemes in approximately defined arrays of MPCs. These schemes include: (i) binary, multivalued, and reversible logic gates; (ii) an associative memory and a synchronization circuit; and (iii) two signal processing nanodevices based on parallel arrays of MPCs and nanoswitches. In each case, the practical operation of the nanodevice is based on the SET properties of MPCs reported experimentally. We examine also some of the practical problems that should be addressed in future experimental realizations: the stochastic nature of the electron tunnelling, the relatively low operation temperatures, and the limited reliability caused by the weak signals involved and the nanostructure variability. The perspectives to solve these problems are based on the potentially high degree of scalability of the nanostructures.

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“…The local heating of the junction during electromigration can increase the temperature, resulting in large gaps, the destruction of the molecules, and the formation of gold islands inside the gap [48]. Unintentional metal debris in the gap interferes with the insertion of the molecules of interest and can mask the intrinsic molecular signals [49][50][51][52]. Careful correlation of spectroscopies can be used to eliminate the presence of metal [28].…”

Section: Fabrication Methodsmentioning

confidence: 99%