Rotary traveling-wave oscillator design using 0.18 μm CMOS

Abstract

A rotary traveling-wave oscillator (RTWO) targeted at 5.8 GHz band operation is designed and fabricated using standard 0.18 m CMOS technology. Both simulation and measurement results are presented. The chip size including pads is 1.5 1.5 mm 2 . The measured output power at a frequency of 5.285 GHz is 6.68 dBm, with a phase noise of -102 dBc/Hz at 1 MHz offset from the carrier.