Round-off of trench corner by post-cylindrical molecular pump sidewall oxidation for 0.25 μm and beyond technologies

Abstract

Articles you may be interested inShallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology J. Vac. Sci. Technol. B 28, 391 (2010); 10.1116/1.3359612 Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication Arsenic doped buried plate characterization in deep trenches for a 0.25 μm complementary metal-oxide-semiconductor technology by chemical etching Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal-oxide semiconductor technology