RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

Luo, Wun-Cheng; Liu, Jen-Chieh; Feng, Hsien-Tsung; Lin, Yen-Chuan; Huang, Jiun-Jia; Lin, Kuan-Liang; Hou, Tuo‐Hung

doi:10.1109/iedm.2012.6479012

Cited by 22 publications

(14 citation statements)

References 12 publications

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“…The coefficient of variation ( σ / μ ) of R on decreases from 52.2% in Figure 1 f to 23.4% in Figure 1 h. Moreover, σ / μ of R off has also improved from 30.6% to 11.1%. The Weibull distribution is widely used in reliability forecast and evaluation [ 13 - 18 ]. The Weibull distribution is described by F = 1 − exp[−( x / x 63% ) β ], where the parameter x 63% is the scale factor which is the value of the statistical variable at F ≈ 63%, β is the shape factor or Weibull slope which represents the statistical dispersion.…”

Section: Resultsmentioning

confidence: 99%

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Wang

Long

et al. 2015

Nanoscale Res Lett

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Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

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Section: Resultsmentioning

confidence: 99%

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Wang

Long

et al. 2015

Nanoscale Res Lett

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“…Forming process in ReRAM cells can be often compared with SiO 2 soft breakdown in MOS structures. 3,[29][30][31] The breakdown follows the weakest link theory based on a percolation model, where percolation paths thorough SiO 2 thin films are formed by defects due to electrical stress. [32][33][34] Because the defects are randomly distributed according to Poisson statistics, the cumulative breakdown probability F is described as follows 31,35 :…”

Section: B Rs Modelmentioning

confidence: 99%

Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

2017

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A resistive switching (RS) phenomenon, namely reversible transitions between the low and high resistance states after forming process, is caused by the formation and rupture of a conductive filament. We confirmed that conductive filaments including a quantum point contact (QPC) in Pt/NiO/Pt RS cells were formed by semiforming, the first step of the forming process. In this study, we examine correlation between microscopic structures in NiO layers and forming characteristics in the Pt/NiO/Pt cells. The appearance condition of the quantized conductance is considered to be associated with the composition ratio of O to Ni of either equivalent to or larger than a critical value. Furthermore, we proposed a RS model based on the forming characteristics especially obtained from the RS cells with different size. Defects which act as the source of a conductive filament including a QPC by semiforming may be randomly distributed in a NiO layer according to Poisson statistics.

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“…The reduced impact from individual defect of non-filamentary switching leads to much smaller resistance variability and read instability in unstressed a-VMCO device [31]. The large read instability induced by defect generation and percolation path formation in severely stressed devices could be improved by further material and structure optimization, especially around the interfacial layer region [32][33][34][35][36]. This work provides insightful guidance for further process and device structure optimization of a-VMCO device.…”

Section: Generated Defects and Percolation Path In 2 Nd Cvs Stagementioning

confidence: 85%

Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO₂ RRAM and Their Impacts on RTN Amplitude Distribution

Chai

Zhang

et al. 2018

IEEE Trans. Electron Devices

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An extensive investigation of the pre-existing and generated defects in amorphous-Si/TiO 2 based non-filamentary (a-VMCO) RRAM device has been carried out in this work to identify the switching and degradation mechanisms, through a combination of random-telegraph-noise (RTN) and constantvoltage-stress (CVS) analysis. The amplitude of RTN, which leads to read instability, is also evaluated statistically at different stages of cell degradation and correlated with different defects, for the first time. It is found that the switching between low and high resistance states (LRS and HRS) are correlated with the profile modulation of pre-existing defects in the 'defect-less' region near the a-Si/TiO 2 interface. The RTN amplitude observed at this stage is small and has a tight distribution. At longer stress times, a percolation path is formed due to defects generation, which introduces larger RTN amplitude and a significant tail in its distribution.

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RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

Cited by 22 publications

References 12 publications

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO₂ RRAM and Their Impacts on RTN Amplitude Distribution

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RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

Cited by 22 publications

References 12 publications

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution

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Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO₂ RRAM and Their Impacts on RTN Amplitude Distribution