2008
DOI: 10.1109/led.2008.922986
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Sb-Heterostructure Millimeter-Wave Detectors With Reduced Capacitance and Noise Equivalent Power

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Cited by 66 publications
(35 citation statements)
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“…We note that this value is the overall responsivity of the FPA, where the lens surface reflections, Gaussian-coupling mismatches and material losses are all included (~7dB losses). Thus, the responsivity of the antenna-diode pixel can be calculated as R v~1 ,000 V/W which agrees very well with the expected value for a diode depletion area of 0.17μm 2 , [3].…”
Section: Thz Camera Characterization: Fpa Sensitivitysupporting
confidence: 81%
See 1 more Smart Citation
“…We note that this value is the overall responsivity of the FPA, where the lens surface reflections, Gaussian-coupling mismatches and material losses are all included (~7dB losses). Thus, the responsivity of the antenna-diode pixel can be calculated as R v~1 ,000 V/W which agrees very well with the expected value for a diode depletion area of 0.17μm 2 , [3].…”
Section: Thz Camera Characterization: Fpa Sensitivitysupporting
confidence: 81%
“…We have been developing FPA THz sensors that consist of ultra fast heterostructure backward diodes (Sb-HBDs) integrated with specially designed broadband THz antennas [3]- [5].…”
Section: Introductionmentioning
confidence: 99%
“…Schottky diodes are used both for coherent and direct detection. As an alternative, tunnel diodes have shown a high responsivity in the millimeter wave range, although they have not been extended to the THz range yet [7].…”
Section: Introductionmentioning
confidence: 99%
“…Structures with asymmetric nonlinear currentvoltage (I-V ) characteristic are commonly used as the sensing elements of the detectors. As an example, we mention the interband tunneling diodes [3], planar doped barrier diodes [4], semimetal-semiconductor transition diodes [5], and Schottky (Mott)-barrier diodes [6]- [9].…”
Section: Introductionmentioning
confidence: 99%