Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy

Zhuang, Qiandong; Anyebe, Ezekiel; Chen, R.; Liu, H.; Sanchez, Ana M.; Rajpalke, Mohana K.; Veal, T. D.; Wang, Z M; Huang, Yanting; Sun, Handong

doi:10.1021/nl5040946

Cited by 60 publications

(99 citation statements)

References 65 publications

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“…For Aucatalyzed grown nanowires, a transition from WZ/ZB polytypism to pure ZB crystal phase occurs at about x = 0.05, 2 while for indium droplet assisted growth the ZB crystal phase becomes dominant at about x = 0.10. 5 These two facts suggest that we should expect to see this structural evolution mirrored by a similar evolution of the bandgap of InAsSb nanowires for increasing antimony composition. The inset of Figure 4b plots the difference between the expected bandgap (for the ZB crystal phase) as a function of antimony composition.…”

Section: Lettermentioning

confidence: 80%

High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal–Organic Chemical Vapor Deposition

et al. 2015

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We report on the first demonstration of InAs1-xSbx nanowires grown by catalyst-free selective-area metal-organic chemical vapor deposition (SA-MOCVD). Antimony composition as high as 15 % is achieved, with strong photoluminescence at all compositions. The quality of the material is assessed by comparing the photoluminescence (PL) peak full-width at half-max (fwhm) of the nanowires to that of epitaxially grown InAsSb thin films on InAs. We find that the fwhm of the nanowires is only a few meV broader than epitaxial films, and a similar trend of relatively constant fwhm for increasing antimony composition is observed. Furthermore, the PL peak energy shows a strong dependence on temperature, suggesting wave-vector conserving transitions are responsible for the observed PL in spite of lattice mismatched growth on InAs substrate. This study shows that high-quality InAsSb nanowires can be grown by SA-MOCVD on lattice mismatched substrate, resulting in material suitable for infrared detectors and high-performance nanoelectronic devices.

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Section: Lettermentioning

confidence: 80%

High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal–Organic Chemical Vapor Deposition

et al. 2015

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“…In a previous study, we reported the growth of vertically aligned InAs NWs on graphite with highly uniform diameters through optimized In droplets28. The growth of high quality, nontapered and ultrahigh aspect ratio InAs 1−x Sb x NWs was also demonstrated on graphite29. It was shown that NW nucleation and growth is facilitated by the predeposited In droplets.…”

mentioning

confidence: 94%

“…Hence, an investigation of the influence of growth parameters and the conditions for realizing optimal InAs NWs with controlled geometry is crucial. Furthermore, most III-V semiconductor NWs are plagued by the presence of wurtzite (WZ) and zinc-blende (ZB) crystal phase mixtures (polytypism)282930 which function as traps for carriers,31 reduce carrier mobility32 and conductivity33. Polytypism also results in electron scattering at stacking faults or twin planes3435 which is detrimental to their optical properties and device applications.…”

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confidence: 99%

Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

Anyebe

Sandall

Jin

et al. 2017

Sci Rep

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The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420–450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

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“…The injection of Sb shows a strongly influence on NW morphology, i.e., axial and lateral growth rate. In terms of crystal phase transition, a detail study from Zhuang et al [230] shows that from WZ/ZB mixed InAs NWs, addition of Sb led to quasi-pure …”

Section: Science China Materialsmentioning

confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy

Cited by 60 publications

References 65 publications

High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal–Organic Chemical Vapor Deposition

High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal–Organic Chemical Vapor Deposition

Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

Growth of III-V semiconductor nanowires and their heterostructures

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