Scalable and Versatile Design Guidance Tool for the ESD Robustness of Integrated Circuits—Part II

Viale, Benjamin; Allard, Bruno

doi:10.1109/tcad.2019.2962119

Cited by 4 publications

(1 citation statement)

References 31 publications

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“…Even a small defect during manufacturing can cause considerable losses to the manufacturer. Electrostatic discharge (ESD) events [1][2][3][4][5][6][7][8][9][10] for integrated circuits (ICs) are the major hazard to reliability.…”

Section: Introductionmentioning

confidence: 99%

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Hong

Chen

2021

Electronics

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Electrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage 60-V n-channel laterally diffused metal-oxide–semiconductor transistor (nLDMOS) element. The effect of the on-voltage characteristics of cascade Schottky diodes on ESD protection was investigated. By using a transmission-line pulse tester, the trigger voltage, holding voltage, and secondary breakdown current (It2) of the nLDMOS element were determined using the I–V characteristic. As the N+ area was gradually replaced by the parasitic Schottky area at the drain electrode, an equivalent circuit of series Schottky diodes formed, which increased the on-resistance. The larger the Schottky area was the higher the It2 value was. This characteristic can considerably improve the ESD immunity of nLDMOS components (highest improvement of 104%). This is a good strategy for improving ESD reliability without increasing the production steps and fabrication cost.

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