Scaleable large-signal model of 0.18 μm CMOS process for rf power predictions

Kuo, Chia Wei; Hsiao, Chao-Chih; Ho, Chia-Cheng; Chan, Yi‐Jen

doi:10.1016/s0038-1101(02)00277-0

Cited by 4 publications

(2 citation statements)

References 4 publications

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“…Accordingly, comprehensive deep sub-100 nm CMOS models that accurately capture DC, RF and noise characteristics of transistors are of great demand. To this end, several MOSFET models have already been developed [3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors

Shen

Cui

Mohammadi

2017

Solid-State Electronics

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A nonlinear and scalable model suitable for predicting high frequency noise of N-type Metal Oxide Semiconductor (NMOS) transistors is presented. The model is developed for a commercial 45 nm CMOS SOI technology and its accuracy is validated through comparison with measured performance of a microwave low noise amplifier. The model employs the virtual source nonlinear core and adds parasitic elements to accurately simulate the RF behavior of multi-finger NMOS transistors up to 40 GHz. For the first time, the traditional long-channel thermal noise model is supplemented with an injection noise model to accurately represent the noise behavior of these short-channel transistors up to 26 GHz. The developed model is simple and easy to extract, yet very accurate.

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Section: Introductionmentioning

confidence: 99%

An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors

Shen

Cui

Mohammadi

2017

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

“…Especially the design of integrated power amplifiers (PAs) in RF front-ends of wireless telecommunication circuits implemented in advanced CMOS technology requires that RF models are also validated under large-signal RF conditions where the device shows a nonlinear behavior. Such validation under more realistic operating conditions, e.g., with load-pull analysis, is however quite scarce in literature [1]- [3] for recent advanced CMOS technology. The EKV3 is a scalable compact MOSFET model which has been designed to provide ease of parameter extraction and provide the designer insight into the device behavior.…”

Section: Introductionmentioning

confidence: 99%