Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires

Jeon, Dae‐Young; Pregl, Sebastian; Park, So Jeong; Baraban, Larysa; Cuniberti, Gianaurelio; Mikolajick, Thomas; Weber, Walter M.

doi:10.1021/acs.nanolett.5b01188

Cited by 35 publications

(35 citation statements)

References 23 publications

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“…Although tremendous efforts have been paid for the improvement of both hole and electron mobilities of ambipolar transistors based on single‐component semiconducting materials, electron and hole transport are not well balanced for most of the time . For example, organic semiconductors can transport holes and electrons simultaneously.…”

Section: Organic–inorganic Hybrid Materialsmentioning

confidence: 99%

Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

182

139

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Ambipolar transistors represent a class of transistors where positive (holes) and negative (electrons) charge carriers both can transport concurrently within the semiconducting channel. The basic switching states of ambipolar transistors are comprised of common off-state and separated on-state mainly impelled by holes or electrons. During the past years, diverse materials are synthesized and utilized for implementing ambipolar charge transport and their further emerging applications comprising ambipolar memory, synaptic, logic, and light-emitting transistors on account of their special bidirectional carrier-transporting characteristic. Within this review, recent developments of ambipolar transistor field involving fundamental principles, interface modifications, selected semiconducting material systems, device structures, ambipolar characteristics, and promising applications are highlighted. The existed challenges and prospective for researching ambipolar transistors in electronics and optoelectronics are also discussed. It is expected that the review and outlook are well timed and instrumental for the rapid progress of academic sector of ambipolar transistors in lighting, display, memory, as well as neuromorphic computing for artificial intelligence.

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Section: Organic–inorganic Hybrid Materialsmentioning

confidence: 99%

Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

182

139

View full text Add to dashboard Cite

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“…A detailed description of the reconfigurable rectifying behaviors can be implemented by an I-V contour map that I DS was plotted on log scale as a function of biased voltages (V DS ) and gate voltages (V G ). [22] As shown in Figure 1c, the ON state and OFF state located within the red regime and blue regime in the I-V contour map, respectively. The off-state showed a parallelogram-like outline, and the device presented a significant reconfigurable rectification in the V G range confined by the parallelogram.…”

Section: Main Results and Discussionmentioning

confidence: 82%

“…Compared with Si nanowires, the CNT barristor shows sharper on-off switching behaviors thanks to CNT's ultra-small body thickness. [22] Therefore, the reconfigurable rectification based on self-gating effect is more significant in CNT barristors than transistors based on 2D semiconducting materials. Furthermore, various electrostatic coupling techniques can be developed to improve reconfigurable self-gating effect by using ion liquid, [31] superionic solids, [32] surface modification, and etc.…”

Section: Main Results and Discussionmentioning

confidence: 99%

Reconfigurable Carbon Nanotube Barristor

Wei

et al. 2021

Adv Funct Materials

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As the semiconductor industry enters the post-Moore era, reconfigurability on the device level, that incorporates multifunction in a device unit to realize more complex systems with more compact logic gates, is a promising methodology to extend the development of integrated circuit industry. Here, a reconfigurable carbon nanotube (CNT) barristor is developed on the basis of a Schottky barrier (SB) CNT transistor. The device shows a significant rectifying characteristic and can be reconfigured to a forward rectifying mode or a backward rectifying mode by applying an appropriate gate voltage. The reconfigurability originates from the ambipolar characteristics of the CNT channel, and the rectification behaviors can be attributed to the drain-induced self-gating effect. Additional experiments reveal that it is the interfacial charge redistribution that plays the role of an additional gate on the SB near the drain. A gate-controllable half-wave rectifier has been fabricated by using the reconfigurable CNT barristor. The CNT barristor brings new functions to CNT electronic devices and also opens up a new methodology for future reconfigurable device design.

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“…It is well consistent with our previous results with Si-NW parallel array SB-FETs. 22 However, in the case of the short-channel device (L eff ≈ 200 nm), the drain bias still modulates electron current considerably from the source side [N2 regime in Figure 3a]. It shows the penetration of the drain field effect into the source side in the short-channel device and the variation of the Schottky barrier of the source side by the drain field.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

Park

Jeon

Sessi

et al. 2020

ACS Appl. Mater. Interfaces

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For use in flexible, printable, wearable electronics, Schottky-barrier field-effect transistors (SB-FETs) with various channel materials including low-dimensional nanomaterials have been considered so far due to their comparatively simple and costeffective integration scheme free of junction and channel dopants. However, the electric conduction mechanism and the scaling properties underlying their performance differ significantly from those of conventional metal−oxide−semiconductor (MOS) fieldeffect transistors. Indeed, an understanding of channel length scaling and drain bias impact has not been elucidated sufficiently.Here, multiple ambipolar SB-FETs with different channel lengths have been fabricated on a single silicon nanowire ensuring a constant nanowire diameter. Their length scaling behavior is analyzed through drain current and transconductance contour maps, each depending on the drain and gate bias. The reduced gate control and extended drain field effect on Schottky junctions were observed in short channels. Activation energy measurements showed lower sensitive behavior of the Schottky barrier to gate bias in the short-channel device and confirmed the thinning of Schottky barrier width for electrons at the source interface with drain bias.

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Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires

Cited by 35 publications

References 23 publications

Recent Advances in Ambipolar Transistors for Functional Applications

Recent Advances in Ambipolar Transistors for Functional Applications

Reconfigurable Carbon Nanotube Barristor

Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

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