Scaling of poly-encapsulated LOCOS for 0.35 μm CMOS technology

Kenkare, P.U.; Mazuré, C.; Hayden, J.D.; Pfiester, J.R.; Ko, Jaehyoung; Kirsch, H.C.; Ajuria, Sergio A.; Crabtree, P.; Vuong, T. H. H.

doi:10.1109/16.259620

Cited by 17 publications

(6 citation statements)

References 12 publications

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“…However, with the ever increasing trend towards smaller geometries, the decrease in length of the nitride masks has meant that the length of encroachment of the bird's beak has become comparable to that of the mask. Lutze & Krusius (1991), Roth et al (1992), Deleonibus & Kim (1993), Deleonibus et al ( , 1994, Kenkare et al (1994), and Park et al (1994) quote values of bird's beak lengths as small as 0-1-0-2 jim but with corresponding mask lengths as small as 0-4 p.m, which is well into the submicron range. Bird's beak punchthrough occurs when the bird's beak length approaches half of the mask length, and it has been investigated experimentally for submicron technology by Kenkare et al (1994).…”

Section: Introductionmentioning

confidence: 99%

Finite-length mask effects in the isolation oxidation of silicon

Evans

Tayler

King

1997

IMA Journal of Applied Mathematics

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A moving-boundary problem modelling the two-dimensional isolation oxidation of silicon is analysed in the limit of reaction-controlled oxidation for a finite-length nitride mask. Encroachment under the mask caused by silicon oxidation then occurs from both sides to produce two 'bird's beaks', and it is the interaction between these beaks on which attention is focused. This effect, termed 'bird's beak punchthrough', is currently of interest in submicron silicon-isolation technologies.

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Section: Introductionmentioning

confidence: 99%

Finite-length mask effects in the isolation oxidation of silicon

Evans

Tayler

King

1997

IMA Journal of Applied Mathematics

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“…The width dependence can be explained in terms of three distinct regimes: merging of oxidant profiles for very narrow widths, coupling of nitride stresses for intermediate widths, and the large width regime which involves no interaction between the two nitride edges. (Obtained using PELOX isolation [3,4])…”

Section: Discussionmentioning

confidence: 99%

“…In order to generalize our results, we compared data for three different isolation schemes: Conventional LOCOS, Poly-Buffer LOCOS (PBL) [2], and PolyEncapsulated LOCOS (PELOX) [3,4].…”

Section: Methodsmentioning

confidence: 97%

“…Electrical characterization was conducted on devices fabricated using a PELOX process described elsewhere [4]. The gate oxide and as-grown field oxide thicknesses were l05A and 7000A respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Electrical encroachment versus the patterned nitride width for a field-implant-free PELOX process with 700081 of field oxide[3,4].…”

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confidence: 99%

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Sensitivity of field isolation profiles to active pattern

Kenkare

Pfiester

Hayden

et al.

Proceedings of IEEE International Electron Devices Meeting

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The birds beak profile for LOCOS-based isolations is shown to be a strong function of the patterned nitride width. In particular, the bird's beak height is found to be much smaller for intermediate widths (-0.6pm) than for either very wide or very narrow nitride lines. These width-dependent phenomena are explained using simulation. Furthermore, the use of Atomic Force Microscopy (AFM) is presented as a convenient approach for quantifying the 2-D encroachment effects common to all LOCOS-based schemes.

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