Scaling Optical Communication for On-Chip Interconnect

Binggeli, Mat; Li, Feng

doi:10.1109/icept.2018.8480739

Cited by 4 publications

(4 citation statements)

References 12 publications

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“…Lately, device performance lagging behind the speeding factor has been explored to improve through the effective solution of on-chip optical interconnections merging with plasmonic components. The nanoscale size of plasmonic devices makes it possible to integrate on-chip nanolasers to achieve ultrafast on-chip optical data processing. , The intriguing features of these nano plasmonic devices of the so-called surface plasmon polaritons, , free-electron collective oscillations at the metal–dielectric interfaces and breaking down the optical diffraction limit, , have received considerable attention from researchers. In plasmonic nanolasers, surface plasmons coupled with photons confine light to the deep subwavelength area at the metal–dielectric material interface, enhancing light–matter interactions and supporting lasing modes much smaller than the optical wavelength. − As a result, the dimension of the plasmonic cavity can be compressed to the nanometer scale, ultimately enabling the simultaneous amplification of photons.…”

Section: Introductionmentioning

confidence: 99%

“…The nanoscale size of plasmonic devices makes it possible to integrate on-chip nanolasers to achieve ultrafast on-chip optical data processing. 3,4 The intriguing features of these nano plasmonic devices of the so-called surface plasmon polaritons, 5,6 free-electron collective oscillations at the metal−dielectric interfaces and breaking down the optical diffraction limit, 7,8 have received considerable attention from researchers. In plasmonic nanolasers, surface plasmons coupled with photons confine light to the deep subwavelength area at the metal−dielectric material interface, enhancing light−matter interactions and supporting lasing modes much smaller than the optical wavelength.…”

Section: ■ Introductionmentioning

confidence: 99%

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Superb Low Threshold Surface-Plasmon Polariton ZnO Nanolasers on an Aluminum Film with Tailored MoO₃ and Ta₂O₅ Dielectric Interlayers of Varied Thickness

et al. 2022

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Effects of high-k dielectric MoO 3 and Ta 2 O 5 interlayers on the lasing thresholds of ZnO/high-k material/Al nanolasers have been investigated. The results demonstrated the highdielectric-constant materials as the interlayers over the epitaxially grown aluminum (Al) film consisting of high-quality ZnO nanowires constructing superb low threshold surface-plasmon polariton lasers. High-quality ZnO nanowires grown via the chemical vapor deposition process were used as the gain media placed over a single-crystalline Al film deposited via molecular beam epitaxy. For high metallic losses in the Al film, high k-dielectric material films (MoO 3 and Ta 2 O 5 ), deposited using the electron beam technique, are inserted in the midst of the Al film and ZnO nanowires to reduce the material losses and enhance the optical confinement. It has been found that the lasing threshold varies with the increasing thickness and reduces while increasing the dielectric constant. The performances are compared with those of similarly fabricated nanolasers with Al 2 O 3 and WO 3 dielectric interlayers. The critical roles of dielectric constants of the dielectric interlayers in influencing the thresholds of lasing are elucidated. Highly suppressed losses in lasing can be attributed to the dielectric layer that manifests the strong energy confinement in the sub regime. It also shows that the correlation of the lasing threshold with the dielectric constant value applies mainly to the same laser system. For different systems, other factors such as the crystallinity and defects present should be taken into consideration.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Superb Low Threshold Surface-Plasmon Polariton ZnO Nanolasers on an Aluminum Film with Tailored MoO₃ and Ta₂O₅ Dielectric Interlayers of Varied Thickness

et al. 2022

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“…The recent advancements in the miniaturization of semiconductor lasers hold the key to emerging technologies, including biosensing [ 1 , 2 ], optical trapping devices [ 3 , 4 ], optical integrated circuits [ 5 , 6 ], photovoltaic devices [ 7 , 8 ], subwavelength imaging [ 9 ], on-chip optical communication [ 10 ], and computing systems [ 11 ]. Traditional semiconductor lasers are severely restricted by the fundamental diffraction law in optics, which limits the size of the optical cavity in orders of the 3D volume to ( λ /2 n ) 3 , where λ is the free space wavelength and n is the refractive index of the dielectrics [ 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

ZnO Nanowires on Single-Crystalline Aluminum Film Coupled with an Insulating WO3 Interlayer Manifesting Low Threshold SPP Laser Operation

et al. 2020

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ZnO nanowire-based surface plasmon polariton (SPP) nanolasers with metal–insulator–semiconductor hierarchical nanostructures have emerged as potential candidates for integrated photonic applications. In the present study, we demonstrated an SPP nanolaser consisting of ZnO nanowires coupled with a single-crystalline aluminum (Al) film and a WO3 dielectric interlayer. High-quality ZnO nanowires were prepared using a vapor phase transport and condensation deposition process via catalyzed growth. Subsequently, prepared ZnO nanowires were transferred onto a single-crystalline Al film grown by molecular beam epitaxy (MBE). Meanwhile, a WO3 dielectric interlayer was deposited between the ZnO nanowires and Al film, via e-beam technique, to prevent the optical loss from dominating the metallic region. The metal–oxide–semiconductor (MOS) structured SPP laser, with an optimal WO3 insulating layer thickness of 3.6 nm, demonstrated an ultra-low threshold laser operation (lasing threshold of 0.79 MW cm−2). This threshold value was nearly eight times lower than that previously reported in similar ZnO/Al2O3/Al plasmonic lasers, which were ≈2.4 and ≈3 times suppressed compared to the SPP laser, with WO3 insulating layer thicknesses of 5 nm and 8 nm, respectively. Such suppression of the lasing threshold is attributed to the WO3 insulating layer, which mediated the strong confinement of the optical field in the subwavelength regime.

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“…Second, optical-to-electrical and electrical-to-optical converter circuits increase the footprint, cost and power consumption, posing an additional challenge as data centers scale. A viable solution to these problems is to use architectures that utilize optical switches [4], [5]. Flat data center architectures based on an optical network, instead of electronic switch-based hierarchical networks, have been proposed, offering notable advantages in latency and power consumption [6].…”

mentioning

confidence: 99%

Compact 8×8 SOA-Based Optical WDM Space Switch in Generic InP Technology

Feyisa

Shi

Kraemer

et al. 2022

J. Lightwave Technol.

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Scaling Optical Communication for On-Chip Interconnect

Cited by 4 publications

References 12 publications

Superb Low Threshold Surface-Plasmon Polariton ZnO Nanolasers on an Aluminum Film with Tailored MoO₃ and Ta₂O₅ Dielectric Interlayers of Varied Thickness

Superb Low Threshold Surface-Plasmon Polariton ZnO Nanolasers on an Aluminum Film with Tailored MoO₃ and Ta₂O₅ Dielectric Interlayers of Varied Thickness

ZnO Nanowires on Single-Crystalline Aluminum Film Coupled with an Insulating WO3 Interlayer Manifesting Low Threshold SPP Laser Operation

Compact 8×8 SOA-Based Optical WDM Space Switch in Generic InP Technology

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Scaling Optical Communication for On-Chip Interconnect

Cited by 4 publications

References 12 publications

Superb Low Threshold Surface-Plasmon Polariton ZnO Nanolasers on an Aluminum Film with Tailored MoO3 and Ta2O5 Dielectric Interlayers of Varied Thickness

Superb Low Threshold Surface-Plasmon Polariton ZnO Nanolasers on an Aluminum Film with Tailored MoO3 and Ta2O5 Dielectric Interlayers of Varied Thickness

ZnO Nanowires on Single-Crystalline Aluminum Film Coupled with an Insulating WO3 Interlayer Manifesting Low Threshold SPP Laser Operation

Compact 8×8 SOA-Based Optical WDM Space Switch in Generic InP Technology

Contact Info

Product

Resources

About

Superb Low Threshold Surface-Plasmon Polariton ZnO Nanolasers on an Aluminum Film with Tailored MoO₃ and Ta₂O₅ Dielectric Interlayers of Varied Thickness

Superb Low Threshold Surface-Plasmon Polariton ZnO Nanolasers on an Aluminum Film with Tailored MoO₃ and Ta₂O₅ Dielectric Interlayers of Varied Thickness