Scaling Theory for Unipolar Resistance Switching

Lee, J. S.; Lee, S. B.; Chang, Seo Hyoung; Gao, Ligang; Kang, Bo Soo; Lee, M.-J.; Kim, C. J.; Noh, Tae Won; Kahng, B.

doi:10.1103/physrevlett.105.205701

Cited by 74 publications

(42 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure S2 in Supplementary Information further shows that both the RESET1 voltage and the current before data correction scale with 30, and thus it is important to control the variation of ON-resistance to obtain highly uniform distributions of the RESET parameters. Some recent works2223 have reported similar scaling behaviors and the scaling theory of the RESET1 voltage and the current in unipolar Pt/NiO/Pt devices. The observed crossover behaviors in the scaling were explained in terms of the connectivity of conducting filaments by analogy with percolation theory.…”

Section: Resultssupporting

confidence: 61%

“…RS is usually induced with a ramped or pulsed electrical stress of the same (unipolar switching) or opposite polarity (bipolar switching) and has been reported in a wide variety of materials, including binary oxides1011121314151617 and complex perovskite oxides1819, etc., among which HfO 2 is one of the most widely investigated and most competitive resistive switching functional materials. To successfully push RRAM into applications, it is imperative to solve some key issues, such as revealing the physics underlying the RS phenomena20212223242526 with special emphasis on the related statistics2728293031 and the effective control of the statistical variation of the switching parameters32. For the filament-type RRAM devices, the mechanism of the SET transition from HRS to LRS or the conductive filament (CF) formation is comparatively clear and is interpreted as a defect-induced soft-breakdown, involving the oxidation/reduction (redox) processes of metal cations or oxygen anions in the interfaces and bulk of the RS layer and their migration through this layer22031.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Long

Perniola

Cagli

et al. 2013

Sci Rep

144

104

View full text Add to dashboard Cite

Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). Here, the RESET switching of HfO2-based RRAM was statistically investigated in terms of the CF conductance evolution. The RESET usually combines an abrupt conductance drop with a progressive phase ending with the complete CF rupture. RESET1 and RESET2 events, corresponding to the initial and final phase of RESET, are found to be controlled by the voltage and power in the CF, respectively. A Monte Carlo simulator based on the thermal dissolution model of unipolar RESET reproduces all of the experimental observations. The results contribute to an improved physics-based understanding on the switching mechanisms and provide additional support to the thermal dissolution model.

show abstract

Section: Resultssupporting

confidence: 61%

mentioning

confidence: 99%

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Long

Perniola

Cagli

et al. 2013

Sci Rep

144

104

View full text Add to dashboard Cite

show abstract

“…A Kinetic Monte Carlo approach [3,4] is based on time dependent step convergence, with randomization of simulation parameters. Another approach incorporates the percolation theory [5] by using stochastic parameters to simulate OV generation, recombination and diffusion [6,7] of the associated process probabilities. Yet another approach is based on the partial differential equation system [8] consisting of the OV drift diffusion continuity, carrier continuity and the steady state Fourier equations.…”

Section: Introductionmentioning

confidence: 99%

A comprehensive study of bipolar operation in resistive switching memory devices

Berco

Tseng

2015

J Comput Electron

View full text Add to dashboard Cite

The authors present a new numerical analysis method to investigate the conduction filament dynamics of a resistive switching nonvolatile metal-insulator-metal structured memory device. This comprehensive method, utilizing the Gibbs free energy criteria as a leading indicator and allowing simulation of all resistive memory operational phases (forming, set and reset), is presented for the first time. The formation and rupture of an oxygen vacancies based conduction filament are simulated to demonstrate a cycle of operation in a hafnium oxide based resistive forming layer. Starting from a random initial distribution of defect states, on to a formed conduction filament and ending in a ruptured state. Detailed plots of the physical parameters within the resistive layer are provided to gain deeper understanding of the conduction filament kinetics and introduce the concept of "hot spots", referring to random localized initial agglomeration of oxygen vacancies in which temperature surges is favored and contribute to initiate the conductive filament formation. By basing the method on well known thermodynamic properties and the Metropolis algorithm, simulation reliability and efficiency are obtained. The presented results confirm previously published data demonstrating the switching characteristics of hafnium based resistive random access memory.

show abstract

“…These characteristics make them particularly suitable for next generation NVM devices because potentially it suffers less from the various scaling issues compared to the currently prevailing charge-based memory devices. TiO 2 and NiO are the two of the most extensively studied binary oxide materials for unipolar resistance switching memory devices236789. Although RS in NiO, where the CF resembles the dendrite-like structure, has been understood from a random circuit breaker model6, the CFs in TiO 2 have been identified as having a distinctive crystalline structure, Magnéli phases (Ti n O 2n−1 , where n = typically 4–5), with a conical or cylindrical shape depending on the electroforming condition891011.…”

mentioning

confidence: 99%

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

Song

Seok

Yoon

et al. 2013

Sci Rep

View full text Add to dashboard Cite

Unipolar resistance switching (RS) in TiO2 thin films originates from the repeated formation and rupture of the Magnéli phase conducting filaments through repeated nano-scale phase transitions. By applying the Johnson-Mehl-Avrami (JMA) type kinetic model to the careful analysis on the evolution of transient current in a pulse-switching, it was possible to elucidate the material specific evolution of the Magnéli phase filament. This methodology was applied to the two types of TiO2 films grown by plasma-enhanced atomic layer deposition (PEALD) and sputtering. These two samples have structurally and electrically distinctive properties: PEALD film exhibited high variability in switching parameters and required an electroforming while sputtered film showed higher uniformity without distinct electroforming process. The JMA-type kinetic analysis of the RS behaviors revealed that the rejuvenation of the filament is accomplished by repeated one-dimensional nucleation followed by a two-dimensional growth in PEALD samples, whereas one-dimensional nucleation-free mechanism dominates in sputtered films.

show abstract

Scaling Theory for Unipolar Resistance Switching

Cited by 74 publications

References 19 publications

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

A comprehensive study of bipolar operation in resistive switching memory devices

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

Contact Info

Product

Resources

About