Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

Winston, Donald; Cord, B.; Ming, Bin; Bell, David C.; DiNatale, W. F.; Stern, Lewis; Vladár, András; Postek, Michael T.; Mondol, Mark K.; Yang, Joel K. W.; Berggren, Karl K.

doi:10.1116/1.3250204

Cited by 98 publications

(85 citation statements)

References 20 publications

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“…A helium ion microscope can also be used for nanofabrication. Sidorkin et al [16] and Winston et al [17] demonstrated the high-resolution manufacturing capabilities of He + beam lithography. Bell et al used an HIM to cut narrow graphene stripes [18].…”

Section: Introductionmentioning

confidence: 99%

Nanopillar growth by focused helium ion-beam-induced deposition

Chen

Veldhoven²,

Sanford

et al. 2010

Nanotechnology

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A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH 3 ) 3 Pt(C P CH 3 ) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current.Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions.

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Section: Introductionmentioning

confidence: 99%

Nanopillar growth by focused helium ion-beam-induced deposition

Chen

Veldhoven²,

Sanford

et al. 2010

Nanotechnology

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“…In resist based lithography with light and ions, it has been shown that the PSF can be deduced from spot exposure arrays. 21,22 We can adopt this concept for nanopore milling: When the breakthrough dose is exceeded at a certain point in the PSF, a hole is created. The diameter of a nanopore is therefore related to the width of the PSF at a certain height.…”

mentioning

confidence: 99%

Nanopore fabrication and characterization by helium ion microscopy

Emmrich

Beyer

Nadzeyka

et al. 2016

Applied Physics Letters

103

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Abstract:The Helium Ion Microscope (HIM) has the capability to image small features with a resolution down to 0.35 nm due to its highly focused gas field ionization source and its small beam-sample interaction volume. In this work, the focused helium ion beam of a HIM is utilized to create nanopores with diameters down to 1.3 nm. It will be demonstrated that nanopores can be milled into silicon nitride, carbon nanomembranes (CNMs) and graphene with well-defined aspect ratio. To image and characterize the produced nanopores, helium ion microscopy and high resolution scanning transmission electron microscopy were used. The analysis of the nanopores' growth behavior, allows inferring on the profile of the helium ion beam.Nanopores in atomically thin membranes can be used for biomolecule analysis, 1 electrochemical storage, 2 as well as for the separation of gases and liquids. 3 All of these applications require a precise control of the size and shape of the nanopores. It was shown that the focused beam of a transmission electron microscope (TEM) is able to create nanopores in membranes of silicon nitride and graphene with diameters down to 2 nm. 4,5 Pores can be further shrunk in a TEM by areal electron impact. 6 However, the preparation of such nanopores in a TEM is time-consuming and is limited to small samples (~3 mm diameter) that fit into the microscope. Focused ion beam tools (FIB) offer more flexibility concerning the sample size and a higher milling speed. Among these FIB tools gallium liquid metal ion sources (LMIS) are widely used, allowing minimum sizes of 3 nm diameter for nanopores. 7 The development of a reliable gas field ionization source (GFIS) type allowed the construction of the helium ion microscope which surpasses the imaging and milling resolution of 9 First studies about milling with helium ions reported sample damage by amorphization and helium implantation during milling on bulk substrates. 10 The latter effect is absent on membranes, where nanopores with diameters of 2.6 nm were milled by HIM. 11 In all these reports, pores were created by single spot exposures. Here we present a different route to create small nanopores in membranes by milling circular patterns. Furthermore we are able to connect the growth of nanopores to the ion beam profile.

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“…HSQ is a high resolution electron beam resist and it permits highresolution SEM inspection following patterning and development. The helium ion beam lithography technology is in its beginnings but it has already demonstrated an ability to fabricate 10 nm hues with a 20 nm pitch [31]. There is still much to be done, but ion beam lithography shows promise and the sensitivity of the resist materials can be substantially higher, so higher -throughput direct lithography may be possible.…”

Section: Helium Ion Beam Lithographymentioning

confidence: 99%

Understanding Imaging and Metrology with the Helium Ion Microscope

Postek¹,

Vladár²,

Ming³

2009

AIP Conference Proceedings

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Abstract. One barrier to innovation confronting all phases of nanotechnology is the lack of accurate metrology for the characterization of nanomaterials. Ultra-high resolution microscopy is a key technology needed to achieve this goal. But, current microscope technology is being pushed to its limits. The scanning and transmission electron microscopes have incrementally improved in performance and other scanned probe technologies such as atomic force microscopy, scanning tunneling microscopy and focused ion beam microscopes have all been applied to nanotechnology with various levels of success. A relatively new tool for nanotechnology is the scanning helium ion microscope (HIM). The HIM is a new complementary imaging and metrology technology for nanotechnology which may be able to push the current resolution barrier lower. But, successful imaging and metrology with this instrument entails new ion beam/specimen interaction physics which must be fully understood. As a new methodology, HIM is beginning to show promise and the abundance of potentially advantageous applications for nanotechnology have yet to be fully exploited. This presentation will discuss some of the progress made at NIST in understanding the science behind this new technique.

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Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

Cited by 98 publications

References 20 publications

Nanopillar growth by focused helium ion-beam-induced deposition

Nanopillar growth by focused helium ion-beam-induced deposition

Nanopore fabrication and characterization by helium ion microscopy

Understanding Imaging and Metrology with the Helium Ion Microscope

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