Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage

Doering, S.; Rudolf, Ralf; Pinkert, Martin; Roetz, Hagen; Wagner, Catejan; Eckl, Stefan; Strasser, Marc; Wachowiak, Andre; Mikolajick, Thomas

doi:10.1016/j.microrel.2014.07.021

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…The distribution of local current was measured in the scanning spreading resistance mode. SSRM is based on atomic force microscopy and offer two dimensional imaging of surface local current with high spatial resolution [22][23][24][25][26]. It is performed in contact mode with constant bias voltage applied between the conductive tip and the measured sample.…”

Section: Atomic Force Microscopy and Scanning Spreading Resistance MImentioning

confidence: 99%

Influence of thermal and UV treatment on the polypropylene/graphite composite

et al. 2016

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Electrically conductive polypropylene/graphite (PP/graphite) composites were prepared via blending granulated PP with maleic anhydride grafted PP and natural graphite. Electrical conductivity of prepared samples containing either 65, 70, or 75 wt.% of graphite was measured and the most conductive sample containing 75 wt.% of graphite was exposed to UV irradiation for 1 and 24 hours or thermally treated at 170 °C for 1 hour. The influence of thermal and UV exposure on the structural and electrical changes in such treated samples was studied. Local current measurements on the surface were made using scanning spreading resistance microscopy and morphology of the surface was studied by atomic force microscopy. X-ray diffraction analysis, infrared and Raman spectroscopy were also used for the structural characterization. Properties of treated and untreated samples are compared and differences are discussed.

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Section: Atomic Force Microscopy and Scanning Spreading Resistance MImentioning

confidence: 99%

Influence of thermal and UV treatment on the polypropylene/graphite composite

et al. 2016

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“…Resistance Microscopy (SSRM), though inherently a 2D technique, fulfils all the aforementioned requirements [2][3][4][5][6][7] and was recently expanded towards 3D applications [8][9][10] . In essence, it relies on measuring the resistance between the tip of a scanning probe and a large current collecting contact, created somewhere on the device of interest.…”

Section: Introductionmentioning

confidence: 99%

Understanding the effect of confinement in scanning spreading resistance microscopy measurements

Pandey

Paredis

Robson

et al. 2020

Journal of Applied Physics

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Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial resolution. However, considering the sub-10nm dimensions of advanced devices and the introduction of three-dimensional architectures like FinFETs and nanowires, the measured spreading resistance is easily impacted by parasitic series resistances present in the system. The limited amount of material, presence of multiple interfaces and confined current paths may increase the total resistance measured by SSRM beyond the expected spreading resistance, which can ultimately lead to an inaccurate carrier quantification. Here, we report a TCAD assisted experimental study to identify the different parameters affecting the SSRM measurements in confined volumes. Experimentally, the two-dimensional current confinement is obtained by progressively thinning down uniformly doped blanket SOI wafers using scalpel SSRM. The concomitant SSRM provides detailed electrical information as a function of depth up to oxide interface. We show that the resistance is most affected by the interface traps in case of a heterogeneous sample, followed by the intrinsic resistance of the current carrying paths. Further, we show that accurate carrier quantification is ensured for typical back-contact distances of 1 µm if the region of interest is at least 9 times larger than the probe radius.

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“…In addition, surface states may influence the amount of detected charge carriers. [20][21][22] Therefore, SSRM is more often used for qualitative [23][24][25][26][27] rather than for quantitative 22 analyses of dopant distributions in semiconductors. Quantified SSRM analyses of the active dopant level in conjunction with results on the total chemical dopant concentration provide valuable information about the level of electrical dopant activation or deactivation.…”

Section: Introductionmentioning

confidence: 99%