In thin films, the structure of the surfaces considerably mfhences the transport of conduction electrons. For mesoscopic roughnesses m the range of a few nm, this ~s due to the varying film thickness, which gwes rise to a spatially fluctuating conductance Moreover, mxroscop~c roughnesses can contnbute to the scattermg of the electrons and therefore addmonally enhance the thm-film resistivity. For a quanmat~ve understandmg of the transport m these systems, a detatled investigation of the surface roughness combined w~th measurements of the electro,tic properties are necessary. Here, v,e discuss STM imaging of various metal films and the application ef these results to the interpretation of electronic thin-film propemes. Provided reasonable resoluhon of STM m the nm range, a good correspondence of STM results with the electrical behavlour ef growing metal films can be estabhshed Furthermore, a detailed two-d,mens~onal analysis allows for a calculation of the potential on current-carrymg thin films On tl,e other hand, th~ method supphes rehable values for the electromc transport parameters