Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method

Abstract

We carried out the temperature (22–350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al0.22Ga0.78N/GaN heterostructures with AlN interlayer grown by metal-organic chemical-vapor deposition. Hall data is analyzed with a simple parallel conduction extraction method and temperature dependent mobility and carrier densities of the bulk and two-dimensional (2D) electrons are extracted successfully. The results for the bulk carriers are discussed using a theoretical model that includes the most important scattering mechanisms that contribute to the mobility. In order to investigate the mobility of two-dimensional electron gas, we used a theoretical model that takes into account the polar optical phonon scattering, acoustic phonon scattering, background impurity scattering, and interface roughness scattering in 2D. In these calculations, the values are used for the deformation potential and ionized impurity density values were obtained from the bulk scattering analysis. Therefore, the number of fitting parameters was reduced from four to two.

SiC Substrate effects on electron transport in the epitaxial graphene layer

“…This kind of behavior in n H and µ H is characteristic of the samples that have a dominant conduction of 2DEG. [14,16,18] The carrier transports parameters (mobility and carrier density) as a function of temperature that are extracted from the SPCEM procedure are presented in Fig. 3(a) and 3(b), respectively.…”

“…[14,15] On the other hand, a simple parallel conduction extraction method (SPCEM), in order to extract the contributions of bulk and 2DEG carriers in a HEMT or MODFET structure, was proposed by Lisesivdin et al. [18] The mobilities and carrier densities of individual carrier channels in AlGaN/GaN heterostructures [16,18] and GaN bulk layers [19] were investigated successfully by using the SPCEM technique.…”

“…[12][13][14][15][16][17][18][19] In order to extract the correct transport parameters of the individual channel in the multilayered structure, such as GaAs/Al x Ga 1-x As and Al x Ga 1-x N/ GaN heterostructures, several extraction techniques were proposed. [12][13][14][15][16]18] Among these techniques, the quantitative mobility spectrum analysis (QMSA) method is the most popular. [14,15] The QMSA technique, which generates optimized quantitative results from the experimental results, can be effectively used for determining the individual carriers in multilayered semiconductors.…”

“…[9] Since the carriers in different conducting channels do not all have the same drift velocity, single magnetic field Hall measurements can only give an approximate result about the carriers in the multichannel conduction structures. [12][13][14][15][16][17][18][19] To extract the contributions of 2DEG conductivity in graphene layers and the parallel conduction in SiC substrate, the simple parallel conduction extraction method (SPCEM) can be used. [13,15,16] There may be an important parallel conducting channel even for the graphene layers and SiC substrate.…”

Surface scattering velocities in III-nitride quantum well laser structures via the emission of hybrid phonons

“…During the last decades, semiconductor industry has focused its interest on growth QW lasers structures made, among others, with III-nitride materials [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Low dimensional structures (LDS) based on nitride semiconductor materials have been used for fabricating light emitting diodes.…”