Scattering of the Electromagnetic Field by a Dielectric Nanotube Covered by a Thin Metal Layer

Ushakou, Dzmitryi V.; Nemilentsau, Andrei; Slepyan, G. Ya.; Sergentu, V. V.

doi:10.1142/9789814343909_0075

Cited by 4 publications

(3 citation statements)

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“…2, the presence of gaps and allowed bands in the band structure is clearly visible. For the propagation of electromagnetic waves in a nanoperforated membrane with the thickness d <<  we use the concept of the infinitely thin slab where the influence of the surface is taken into consideration in the form of boundary conditions [15][16]. In the approximation of scalar waves [17][18], one can use the modified Helmholtz equation…”

Section: Fabrication Of Phc Circuits Based On Ultrathin Gan Membranesmentioning

confidence: 99%

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

et al. 2015

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We report on maskless fabrication of photonic crystal (PhC) circuits based on ultrathin (d ~ 15 nm) nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with diameters of 150 nm. In recent years, we have proposed and developed a cost-effective technology for GaN micro-and nanostructuring, the so-called surface charge lithography (SCL), which opened wide possibilities for a controlled fabrication of GaN ultrathin membranes. SCL is a maskless approach based on direct writing of negative charges on the surface of a semiconductor by a focused ion beam (FIB). These charges shield the material against photo-electrochemical (PEC) etching. Ultrathin GaN membranes suspended on specially designed GaN microstructures have been fabricated using a technological route based on SCL with two selected doses of ion beam treatment. Calculation of the dispersion law in nanoperforated membranes in the approximation of scalar waves is indicative of the occurrence of surface and bulk modes, and there is a range of frequencies where only surface modes can exist. Advantages of the occurrence of two types of modes in ultrathin nanoperforated GaN membranes from the point of view of their incorporation in photonic and optoelectronic integrated circuits are discussed. Along with this, we present the results of a comparative analysis of persistent photoconductivity (PPC) and optical quenching (OQ) effects occurring in continuous and nanoperforated ultrathin GaN suspended membranes, and assess the mechanisms behind these phenomena.

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Section: Fabrication Of Phc Circuits Based On Ultrathin Gan Membranesmentioning

confidence: 99%

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

et al. 2015

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“…We generalized the model and included a more general dependence ( m ≠ 0) on the angular coordinates as compared to Refs. .…”

Section: A Model For Simplest Nanotubesmentioning

confidence: 99%

“…With standard boundary conditions for a single nanocylinder , and seeking the solution is the form , we obtain the following relation:

D_{m} = - \frac{(d/d R) (I_{m}^{2} (h R)) (ϵ_{1} - ϵ_{2})}{(d / d R) (K_{m} (h R) I_{m} (h R)) (ϵ_{1} - ϵ_{2}) + I_{m} {(h R)}^{2} (d / d R) (K_{m} (h R) / I_{m} (h R)) (ϵ_{1} + ϵ_{2})}

…”

Section: Dispersion Law For Systems Of Nanocylinders and Nanoporesmentioning

confidence: 99%

Body zero frequency modes in photonic crystals of nanopores and nanocylinders

Sergentu

Ursaki

Sirbu

2013

Physica Status Solidi (b)

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Nearfield effect in a nanotube/nanopor array system for application in EWOD devices that are operating in THz region

Sirbu¹,

Sergentu

Voicu

et al. 2012

CAS 2012 (International Semiconductor Conference)

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Scattering of the Electromagnetic Field by a Dielectric Nanotube Covered by a Thin Metal Layer

Cited by 4 publications

References 0 publications

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

Body zero frequency modes in photonic crystals of nanopores and nanocylinders

Nearfield effect in a nanotube/nanopor array system for application in EWOD devices that are operating in THz region

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