Schottky Barrier Contact-Based RF MEMS Switch

Pillans, B.; Morris, Frank; Chahal, Premjeet; Frazier, G.; Lee, Jeong

doi:10.1109/jmems.2008.2007227

Cited by 4 publications

(4 citation statements)

References 20 publications

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“…The first step in characterizing the linearity is to 5. Functional diagram of the linearity testing setup.…”

Section: Resultsmentioning

confidence: 99%

“…This work describes a method to control the dielectric conductivity by reverse biasing a Schottky baffier to minimize conductivity and forward biasing the Schottky barrier to flush out any trapped charge. Initial data indicates this switch has shown a 35% improvement in lifetime [5] and has the potential for much more. This Schottky barrier is integrated into the RF MEMS switch structure and doubles as the switch dielectric.…”

Section: Introductionmentioning

confidence: 99%

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Schottky Contact RF MEMS Switch Characterization

Pillans

Morris

Chahal

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

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This paper presents measured results for a novel Schottky barrier contact-based RF MEMS switch, specifically Sparameter and IP2 linearity measurements. The Schottky barrier contact allows one to operate the RF MEMS switch in a traditional capacitive mode when it is reverse biased, but can also conduct current in a forward biased state to discharge trapped charges. This configuration improves reliability, but increases insertion loss. This work intimately combines MEMS processing with solid-state electronics to produce a truly unique RF device. To the author's knowledge, nothing similar to this work has ever been reported.

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“…The first step in characterizing the linearity is to 5. Functional diagram of the linearity testing setup.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Schottky Contact RF MEMS Switch Characterization

Pillans

Morris

Chahal

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

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“…Such switches were expected to have an operational lifetime that could be 10 3 to 10 9 times longer than the operational lifetime of comparable pre-existing switches that lack the textured surface. Finally, since the electrical properties of the amorphous dielectric films used in MEMS depend on the deposition conditions [15,16,35] and no standardization has been introduced on the deposition conditions, a different approach based on Schottky barrier contact was proposed in [35].…”

Section: Assessment On Mim Capacitorsmentioning

confidence: 99%

Electrical properties of nanostructured SiN films for MEMS capacitive switches

Koutsoureli

Xavier

Michalas

et al. 2016

J. Micromech. Microeng.

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The electrical properties of gold nanorods nanostructured silicon nitride films are comprehensively investigated with the aid of metal-insulator-metal capacitors and RF MEMS capacitive switches. Different nanorod diameters and densities were grown on the bottom electrode and with orientation normal to dielectric film surface. A simple physical model, which does not take the effect of electric field fringing into account, was developed to describe both the DC and low frequency electrical properties. It has been shown that the nanorods distribution and dimensions determine the electrical properties as well as the dielectric charging phenomena of the nanostructured films. Finally, in MEMS switches it has been shown that the nanorods presence does not affect the capacitance variance nor the RF characteristics of the device.

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“…Although this technique does not entirely remove charge injection into the dielectric, extended test results have shown switches having higher reliability through this technique.Charging in RF-MEMS switches has been addressed by using a Schottky diode with a membrane and semiconductor in place of the usual dielectric layer. Pillans et al[37] have demonstrated the use of Schottky barrier contact based RF-MEMS switch. In this switch, n ++ InGaAs is used as the bottom electrode and epitaxial InAlAs is used as the dielectric layer.…”

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confidence: 99%