Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structure

Parizi, Kokab B.; Peyvast, Negin; Mousavi, Behnam Kheyraddini; Mohajerzadeh, S.; Fathipour, Morteza

doi:10.1016/j.sse.2009.09.010

Cited by 16 publications

(3 citation statements)

References 8 publications

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“…With continued research and development microelectromechanical systems (MEMS) are finding their way into many commercial applications. The applications cover a wide range from modern electronics [1][2][3][4] to optoelectronics [3,4] and mechanical systems such as sensors [5,6] and actuators [7]. Some common examples include carbon nanotubes, carbon nanofibers [8], nanostructured anti-reflection coatings [4], phononic crystals [6,9], micromirror arrays [10], and MEMS gyroscopes [5].…”

Section: Introductionmentioning

confidence: 99%

Mode II adhesion energy analysis of stiction-failed poly-Si $\mu$ cantilevers using a MEMS load cell

Mousavi¹,

Mousavi²,

Hieber³

et al. 2019

J. Micromech. Microeng.

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Section: Introductionmentioning

confidence: 99%

Mode II adhesion energy analysis of stiction-failed poly-Si $\mu$ cantilevers using a MEMS load cell

Mousavi¹,

Mousavi²,

Hieber³

et al. 2019

J. Micromech. Microeng.

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“…In particular, an FET with asymmetric Schottky (rectifying) source and ohmic drain is called a Schottky tunneling source (STS) FET. [5][6][7][8] STS FET is an alternative device structure to overcome problems related to the advanced scaling of the S/D. Its operation principle is carrier injection by field emission (FE) to the channel under a strong accumulation state induced by the gate voltage (V G ), as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation

Yamamoto

Nakae

Wang

et al. 2019

Jpn. J. Appl. Phys.

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An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short-channel effect. Recently, we succeeded in the fabrication and operation of a Ge-STS n-channel FET with TiN and PtGe asymmetric metal source/drain (S/D) on a bulk Ge substrate. However, the Ge-STS p-channel FET has not been demonstrated yet. In this study, we fabricated an asymmetric metal S/D FET with the same S/D structure on a bulk Ge and a Ge-on-Insulator (GOI) substrate. The GOI was made by using the Smart-CutTM technique. The device fabricated on a bulk Ge did not operate. On the other hand, the fabricated FET on a GOI, which has a taper-shaped TiN/Ge source interface, showed STS p-FET behavior. These results suggest that the carrier injection can be improved by the optimization of the device structure. As an auxiliary effect, conventional metal-oxide-semiconductor (MOS) FET operation was also observed, thanks to GOI introduction. We demonstrated both STS mode and MOSFET mode operation in the same device on GOI.

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“…14) To overcome these problems, several strategies have been reported with simulation and experimental results. [15][16][17][18][19][20][21][22][23][24][25] Hu et al and Asra et al have suggested enlarging the tunneling area by increasing the gate-source overlap will be one of the solutions for boosting the I on . [26][27][28] However, the requirement of additional area for the gate-source overlap and the SCE makes it difficult to reduce the device size.…”

Section: Introductionmentioning

confidence: 99%

Design Guideline of Si-Based L-Shaped Tunneling Field-Effect Transistors

Kim

Choi

Sun

et al. 2012

Jpn. J. Appl. Phys.

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The transformation of high-frequency vibrations of piezoelectric elements into continuous linear motion of a slider is one of the main tasks of a linear piezoelectric motor. To produce a high thrust force in the piezoelectric linear actuator, we proposed the compound piezoelectric linear actuator based on a ''shaking beam'' excited by two sources of longitudinal mechanical vibrations shifted by =2. The compound actuator consists of two shaking beams and is rigidly fastened. The finite element method (FEM) was used to define structural and electrical boundary conditions for the compound piezoelectric actuator. FEM analysis showed that the compound actuator's trajectory was elliptical. Experimental research has shown that the compound piezoelectric actuator has high thrust force.

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Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structure

Cited by 16 publications

References 8 publications

Mode II adhesion energy analysis of stiction-failed poly-Si $\mu$ cantilevers using a MEMS load cell

Mode II adhesion energy analysis of stiction-failed poly-Si $\mu$ cantilevers using a MEMS load cell

Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation

Design Guideline of Si-Based L-Shaped Tunneling Field-Effect Transistors

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