Schottky Collector Bipolar Transistor Without Impurity Doped Emitter and Base: Design and Performance

Abstract

In this brief, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin silicon-on-insulator film. Using different metal work function electrodes, the electrons and holes are induced in an intrinsic silicon film to create the n-emitter and the p-base regions, respectively. Using 2-D device simulation, the performance of the proposed device has been evaluated. Our results demonstrate that the charge plasma-based bipolar transistor with Schottky collector exhibits a high current gain and a better cutoff frequency compared with its conventional counterpart.

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

“…Since a charge plasma p-n junction has already been experimentally demonstrated [23] and the charge plasma based doping-less bipolar junction transistor [25,26] and the junction-less TFET have been reported [8], we believe that our results may provide the incentive for further exploration of the doping-less TFET.…”

“…In the doping-less TFET, the "p" source and "n" drain regions are formed using the charge plasma concept [23][24][25][26]. Under thermal equilibrium conditions, for creating the "n" drain region by inducing electrons with a concentration similar to the N + drain doping of the reference device in the intrinsic silicon body, hafnium (work function=3.9 eV) is employed as the drain metal electrode.…”

“…However, creating abrupt junctions using high temperature processes is not easy due to the diffusion of the dopant atoms from the source/drain regions into the channel. Email: mamidala@ee.iitd.ac.in; sindhuramaswamy@gmail.com In this work, we report a detailed study on the doping-less TFET on intrinsic silicon film using the charge plasma concept [23][24][25][26]. In the doping-less TFET structure, without the need for any doping, the "p" source and the "n" drain are induced in the intrinsic silicon body by choosing the source and drain metal electrodes with suitable work functions.…”

Modeling of Dirac Electron Tunneling Current in Bipolar Transistor Based on Armchair Graphene Nanoribbon Using a Transfer Matrix Method

“…Several models have been done to calculate the tunneling current in bipolar transistor based on silicon and graphene material by solving the Schrödinger equation [4][5][6][7]. In this paper, we study the tunneling current in np-n bipolar transistor based on AGNRs by solving the relativistic Dirac equation.…”

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

“…The "n + " source/drain regions and "p + " body contact are formed using the charge plasma concept by using metal electrodes of a specific work function [10,11]. The charge plasma concept is used to realize both low power devices [12][13][14][15][16][17][18][19][20][21][22][23][24][25] and a high power p-i-n diode [26]. We show in this work that LDMOS can also be implemented using the charge plasma principle and consequently reduce the number of thermal steps required during the fabrication.…”