Schottky diode properties of Au, InGaP (111) and (110) chemically etched surfaces

The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

“…Especially, gallium phosphide (GaP) surface has been less studied than GaAs or InP surfaces as III-IV compounds [6]. GaP is an amazing III-V semiconductor which has potential high-temperature applications because of its rather wide band gap (2.25 eV) [7,8].…”

“…GaP is an amazing III-V semiconductor which has potential high-temperature applications because of its rather wide band gap (2.25 eV) [7,8]. Therefore, GaP used to fabricated photodiodes, in visible light emission diodes (LEDs) and field effect transistor (FET) [5][6][7][8].…”

“…Ismail et al [6] have discussed experimental results relevant to (111) and (11 0) chemically etched GaP surfaces. They used to determine the surface composition resulting from etching with several solutions to determine by Auger electron spectroscopy.…”

“…They used to determine the surface composition resulting from etching with several solutions to determine by Auger electron spectroscopy. They [6] have compared the current-voltage (I-V), capacitancevoltage (C-V) of Au/n-GaP, and In/n-GaP Schottky diodes, and concluded that the diode characteristics depend on the surface contamination such as residual oxide and metal. Duman et al [8] have fabricated Ni/n-GaP Schottky diodes by DC magnetron deposition.…”