The electrical characterizations and illumination response of Co/N-type GaP junction device

Orak, İkram; Ejderha, Kadir; Türüt, A.

doi:10.1016/j.cap.2015.05.014

Cited by 25 publications

(6 citation statements)

References 37 publications

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“…15 Therefore, to reduce the amount of N ss , leakage current, R s , and increase of BH, RR, and R sh , researchers concentrated on improving the electrical and optical properties by using an organic/polymer interlayer with appropriate metal or metal oxide doped. [16][17][18] Since polymers were compared with insulators such as SiO 2 and SnO 2 , they have conspicuous features such as a good surface area to volume ratio, high charge storage capability, lightweight, strong mechanical and dielectric strength, and simple grown methods. Despite that, unfortunately, polymers have some inabilities, such as dielectric permittivity and poor mobility.…”

Section: Introductionmentioning

confidence: 99%

“…These states can be originated from the semiconductor‐surface imperfection such as dangling bonds, oxygen‐vacancies, doping donor/acceptor atoms, periodic disorders in the semiconductor crystal, and some organic contaminations in the laboratory environment during cleaning and preparation processes 15 . Therefore, to reduce the amount of N ss , leakage current, R s , and increase of BH, RR, and R sh , researchers concentrated on improving the electrical and optical properties by using an organic/polymer interlayer with appropriate metal or metal oxide doped 16–18 . Since polymers were compared with insulators such as SiO 2 and SnO 2 , they have conspicuous features such as a good surface area to volume ratio, high charge storage capability, lightweight, strong mechanical and dielectric strength, and simple grown methods.…”

Section: Introductionmentioning

confidence: 99%

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The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Altındal

Azizian‐Kalandaragh

Ulusoy

et al. 2022

J of Applied Polymer Sci

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Photoresponse of the Au/(Er2O3:PVC)/n‐Si diode was executed in a wide range of illumination intensity (P). Its basic electrical parameters such as ideality factor (n), barrier height (ΦB0), series and shunt resistances (Rs, Rsh), photocurrent (Iph), energy‐dependence of interface states (Nss), and photosensitivity (S) were calculated from the results of the current–voltage (I–V) measurements. At the negative‐bias region, an increase in Iph is observed due to the e−‐h+ pairs that occur as a result of increasing P and their drift in opposite directions under the internal electric field. The ln(Iph)–ln(P) plot shows a good linear behavior under various applied voltages. Their slopes vary from 1.47 to 1.64, indicating that empty trap levels, that is, levels not occupied by charges, are of low density. The values n, ΦB0, and Rs were obtained using the thermionic emission theory, Cheung, and Norde functions. The value of ΦB0 decreases with increasing n and P as linearly with ΦB0(n) = (−0.143n + 1.118) eV and ΦB0(P) = (−2 × 10−4P + 0.831) eV, respectively. This illumination coefficient of ΦB0 (=−2 × 10−4 eV/[mW/cm2]) is close to the temperature coefficient bandgap of Si (=−4.73 × 10−4 eV/K). These results show that the performed Au/(Er2O3:PVC)/n‐Si diode has excellent photo‐response and can be successfully used in photovoltaic applications instead of conventional metal–semiconductor diodes.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Altındal

Azizian‐Kalandaragh

Ulusoy

et al. 2022

J of Applied Polymer Sci

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“…But the performance and quality of these contacts can be changed or improved by using interfacial insulator layers (Bilkan et al, 2015). If an insulator sheet for instance TiO 2 , SrTiO 3 , SiO 2 , SnO 2 and Si 3 N 4 is inserted between semiconductor and metal, the metal semiconductor structures change a metaloxide-semiconductor (MOS) structure (Türüt et al, 2015) (≥ 100 Å) or metal-insulator-semiconductor (MIS) ) (≤ 100 Å) based on the thickness of insulator. Presence of some insulator layer induces deviation from the ideal property which could be detected the C-V and G/w-V measurements of metal semiconductor contacts (Gökçen et al, 2012).…”

Section: Introductionmentioning

confidence: 99%

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Orak¹,

Koçyiğit²

2016

jist

Self Cite

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Metal-Insulator-semiconductor contacts (MIS) have been studied its importance in electronic and optoelectronic. Their importance comes from its so high dielectric constant, storage layer property and effect of capacitance. For this reason, Si 3 N 4 were deposited with PECVD technique on p-type Si about 5 nm thickness layers. The thicknesses of Si 3 N 4 were measured with an elipsometre and obtained MIS contact with Al contact. It was researched the insulator layer effect on the Al/p-Si contact. Its electrical characterizations were inquired by use of the forward and reverse bias I-V, C-V and G-V measurements and were seen that the insulator Si 3 N 4 layer influenced characterizations of the contact. Effect of the interface states (N ss ), the series resistance (R s ) and the other some electrical parameters were investigated by calculating from I-V and C-V measurements. It was observed that from the C-V characterizations at 500 kHz dual, contact behaved similarly memristor structure.Keywords: Al/Si 3 N 4 /p-Si, capacitance behavior, metal-insulator-semiconductor structure, Schottky diode ÖZET: Metal-yalıtkan-yarıiletken (MIS) aygıtlar elektronik ve optoelektronikteki önemlerinden dolayı çalışılmaktadır. Bu önem aygıtların yüksek dielektrik sabitine, depolama tabakası ve kapasitans özelliklerine sahip olmalarından kaynaklanmaktadır. Bu yüzden Si 3 N 4 tabakası p-tipi Si üzerine PECVD tekniği kullanılarak büyütülmüş, kalınlığı elipsometre ile 5 nm olarak ölçülmüştür ve Al kontak sayesinde MIS yapısı elde edilmiştir. Elde edilen Al/p-Si yapısı üzerine Si 3 N 4 tabakasının etkisi araştırılmıştır. Bunun için aygıtın elektrik karakterizasyonları ileri ve ters beslem I-V, C-V ve G-V ölçümleriyle yapılmış ve yalıtkan Si 3 N 4 tabakanın diyot özelliklerini oldukça etkilediği görülmüştür. Ara yüzey halleri (N ss ), seri direnç (R s ) ve diğer bazı elektriksel parametrelerin aygıt üzerine etkileri I-V ve C-V ölçümlerinden hesaplanarak araştırılmıştır. C-V ölçümlerinden aygıtın memristör bir yapı gibi davrandığı tespit edilmiştir.

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“…It is well known that substitution doping process is very important in increasing free charge carriers [20]. As can be seen, the Al/HCP-2/p-Si/Al diode of high rectification behaviour with rectification ratio RR of 2.15 × 10 6 at 3 V. Schottky diode parameters such as ideality factor n and barrier height ϕ b were calculated from (I-V) characteristics curve in dark and at room temperature by using the thermionic emission theory [21][22][23]:…”

Section: I-v Characteristics For Al/hcp-2/p-si/al and Al/hcp-4/p-si/amentioning

confidence: 99%

Design and fabrication of dioxyphenylcoumarin substituted cyclotriphosphazene compounds photodiodes

Elgazzar

Dere

Özen

et al. 2017

Physica B: Condensed Matter

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The electrical characterizations and illumination response of Co/N-type GaP junction device

Cited by 25 publications

References 37 publications

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Design and fabrication of dioxyphenylcoumarin substituted cyclotriphosphazene compounds photodiodes

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The electrical characterizations and illumination response of Co/N-type GaP junction device

Cited by 25 publications

References 37 publications

The illumination effects on the current conduction mechanisms of the Au/(Er2O3:PVC)/n‐Si (MPS) Schottky diodes

The illumination effects on the current conduction mechanisms of the Au/(Er2O3:PVC)/n‐Si (MPS) Schottky diodes

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Design and fabrication of dioxyphenylcoumarin substituted cyclotriphosphazene compounds photodiodes

Contact Info

Product

Resources

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The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes