Schottky diodes based on a single GaN nanowire

Kim, Jae Ryoung; Oh, Hyun‐Taek; So, Hye Mi; Kim, Ju‐Jin; Kim, Jinhee; Lee, Cheol Jin; Lyu, Seung Chul

doi:10.1088/0957-4484/13/5/333

Cited by 87 publications

(62 citation statements)

References 28 publications

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“…Moreover, the low density of surface states of the nitrides favours this material system for assembling nanoscale devices, where the surface-to-volume ratio is large and the surface related recombination centres in the band gap would drastically reduce the performance. The first GaN nanowire-based devices have been demonstrated including field effect transistors [1], Schottky diodes [2], light emitters [3] and detectors [4]. It demonstrates the high capability for applications in photonic, light-emitting and biological nano devices.…”

Section: Introductionmentioning

confidence: 99%

“…GaN and InN nanowires have been prepared by various techniques including plasma-assisted molecular beam epitaxy [5], laser ablation [6], metal organic chemical vapour deposition [7] and reaction of NH 3 with Ga [3,4] (In [8]) powder, Ga/GaN [2] or Ga/Ga 2 O 3 [9] (In/In 2 O 3 [10]) mixtures. In contrary, little is reported on the preparation of AlN nanowires [11,12].…”

Section: Introductionmentioning

confidence: 99%

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Growth of AlN nanowires by metal organic chemical vapour deposition

Cimalla

Foerster

Cengher

et al. 2006

Physica Status Solidi (b)

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AlN nanowires with a diameter of 20 nm were grown stochastically by the vapour-liquid-solid (VLS) method. At low temperatures below 1000 °C the Kirkendall effect during the alloying of aluminium and the catalyst resulted in the formation of three-dimensional nanostructures like lamellas and nano flowers. The high temperatures above 1000 °C, which are necessary to grow the nanowires complicate the control of their formation. Small catalyst droplets of 20 nm diameter are not stable due to their evaporation. Thus, in contrast to the classical approach to grow a single nano wire out of one droplet, we grew dense networks of nanowires inside larger 3D structures with diameters up to 5 µm. Depending on the growth temperature and the droplet geometry the nanowires inside of these networks are connected by angles of 90° ("cubic") or 120° ("hexagonal").

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth of AlN nanowires by metal organic chemical vapour deposition

Cimalla

Foerster

Cengher

et al. 2006

Physica Status Solidi (b)

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“…Thus, the pore diameter is dependent on the electrolyte and applied voltage, while the thickness depends on the duration of the anodization process, which allows for the synthesis of porous structures with large aspect ratios [3,4]. These attractive features make AAO membranes an ideal template for a variety of nanotechnology applications that use them in the manufacture of nanometer scale materials and devices [5][6][7] or incorporate them into specific applications such as biological/chemical sensors [8,9], nanoelectronic devices [10,11], filter membranes [12] and medical scaffolds for tissue engineering [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Biocompatibility Of Synthesised Nano-Porous Anodic Aluminium Oxide Membranes For Use As A Cell Culture Substrate For Madin-Darby Canine Kidneys Cells: A Preliminary Study

Poinern¹

2012

J Tissue Sci Eng

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In this study we investigate for the first time the biomedical potential of using a membrane made from anodic aluminium oxide (AAO) for culturing the Madin-Darby Canine Kidney (MDCK) epithelial cell line. Nano-porous aluminium oxide membranes exhibit interesting properties such as high porosity, which allows the exchange of molecules and nutrients across the membrane and can be made with highly specific pore sizes that can be preselected by adjusting the controlling parameters of a temperature controlled two-step anodization process. The cellular response and interactions of the MDCK cell line with the synthesised nano-porous AAO membrane, a commercially available membrane and a glass control were assessed by investigating cell adhesion, morphology and proliferation. The number of viable cells proliferating over the surface of each respective membrane was quantified over a 72 h period and revealed that synthesised alumina membrane was at least comparable to the glass control substrate. Furthermore, both optical and electron microscopy investigations revealed distinct evidence of focal adhesion sites on the nano-porous membranes and the penetration of cellular extensions into the pore structure. The results of the study indicate that nano-porous AAO membranes have the potential to become practical cell culture substrates with the ability to enhance adhesion and proliferation of MDCK cells.

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“…This is particularly the case when the semiconducting materials are in nanostructured format, such as GaN nanowires [37], ZnO nanorods [38], InP nanoneedles [39] and carbon nanotubes [40,41]. With regard to the barrier region itself, we have already flagged studies on its modification in the context of gas (hydrogen) sensing.…”

Section: Introductionmentioning

confidence: 99%

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

Dawson¹,

Feng²,

Penate-Quesada³

et al. 2011

J. Phys. D: Appl. Phys.

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The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation Dawson, P., Feng, L., Penate-Quesada, L., Mitra, J., & Hill, G. (2011 Abstract Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of ∼100 K) in the diode resistance-temperature (R D -T ) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R D -T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs-and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

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Schottky diodes based on a single GaN nanowire

Cited by 87 publications

References 28 publications

Growth of AlN nanowires by metal organic chemical vapour deposition

Growth of AlN nanowires by metal organic chemical vapour deposition

Biocompatibility Of Synthesised Nano-Porous Anodic Aluminium Oxide Membranes For Use As A Cell Culture Substrate For Madin-Darby Canine Kidneys Cells: A Preliminary Study

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

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