Schottky diodes with high breakdown voltages

Wilamowski, B. M.

doi:10.1016/0038-1101(83)90106-5

Cited by 42 publications

(16 citation statements)

References 5 publications

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“…Our future goal is to produce 2D dopant maps showing the position of the metallurgic p/n junction for zero bias-voltage of the device. [4,5]. We utilized two different implantation depths to virtually define our JBS-pattern at the anode side of the device.…”

Section: Motivationmentioning

confidence: 99%

“…Together, Schottky-barrier lowering and quantum-mechanical tunneling [3], are responsible for a significant increase of the experimentally observable leakage-current (refer e.g. to [4]) and will additionally lead to premature breakdown of the devices at a relatively low reverse-voltage. Thus, high-voltage applications (e.g.…”

Section: Motivationmentioning

confidence: 99%

“…3.3 kV) require a technological rectifier-solution which is here provided by shielding the Schottky-contact from the high E-field inside the device. An appropriate device architecture is offered by the Junction-Barrier Schottky (JBS) design [4]. Here, implanted, highly doped p + regions within the conducting area of the vertically designed power device (anode on top of the wafer; cathode at the backside of the wafer) take the role of a shielding structure at the anode-side of the device when operated at high reverse bias-voltage close to avalanche breakdown.…”

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confidence: 99%

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Improving the Design of the Shield for the Electric Field in SiC-Based Schottky-Rectifiers and Ion-Implantation Cascades by SPM Dopant-Imaging

Bartolf

Gysin

Glatzel

et al. 2015

Microelectronic Engineering

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Section: Motivationmentioning

confidence: 99%

Section: Motivationmentioning

confidence: 99%

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confidence: 99%

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Improving the Design of the Shield for the Electric Field in SiC-Based Schottky-Rectifiers and Ion-Implantation Cascades by SPM Dopant-Imaging

Bartolf

Gysin

Glatzel

et al. 2015

Microelectronic Engineering

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“…By contrast, the pin junction rectifier has low forward drop and high current capability due to conductivity modulation, but has slow reverse recovery characteristics due to minority carrier storage. To combine the best features of these two rectifiers, hybrid rectifier structures, such as the Junction Barrier Schottky (JBS), Merged Pin/Schottky (MPS) and MOS Barrier Schottky (MBS) rectifiers have been proposed and have been demonstrated in silicon (Wilamowski 1983;Baliga 1984;Baliga & Chang 1987;Mehrotra & Baliga 1995). The trench version of the MBS rectifier is schematically shown in Fig Whether a unipolar or a bipolar rectifier is preferred depends on many device parameters, such as reverse blocking voltage, forward current density, maximum allowable reverse current density, operating temperature and switching frequency.…”

Section: Power Rectifiersmentioning

confidence: 99%

“…In order to achieve good reverse blocking characteristics while maintaining a Schottky forward conduction and fast reverse recovery characteristics, several modern rectifiers, such as Junction Barrier Schottky (JBS) (Wilamowski 1983;Baliga 1984), Dual Metal Trench (DMT) Schottky and Trench MOS Barrier Schottky (TMBS) (Mehrotra & Baliga 1995) rectifiers, have been explored. The physical principle used to reduce the leakage current is the same -to completely deplete the Schottky mesa regions under the Schottky junction so as to suppress the electric field from rising at the Schottky junction when the bias at the substrate cathode is increased.…”

Section: Hybrid Rectifiersmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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