1998
DOI: 10.1016/s0040-6090(98)00945-6
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Schottky gate static induction transistor using copper phthalocyanine films

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Cited by 121 publications
(78 citation statements)
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“…SITs were first developed using inorganic semiconductors, [5] and they have only recently been used with organic semiconductors. [6][7][8][9][10][11][12] When fabricating solid-state triodes based on organic semiconductors, it is necessary to embed a stripe or mesh gate electrode, which corresponds to a grid electrode in a vacuum triode, in the organic layer. It is important that the fine mesh structure of a gate electrode be fabricated to effectively modulate the potential barrier height against the carrier flow and to improve the transistor characteristics.…”
mentioning
confidence: 99%
“…SITs were first developed using inorganic semiconductors, [5] and they have only recently been used with organic semiconductors. [6][7][8][9][10][11][12] When fabricating solid-state triodes based on organic semiconductors, it is necessary to embed a stripe or mesh gate electrode, which corresponds to a grid electrode in a vacuum triode, in the organic layer. It is important that the fine mesh structure of a gate electrode be fabricated to effectively modulate the potential barrier height against the carrier flow and to improve the transistor characteristics.…”
mentioning
confidence: 99%
“…The observed J DS was extremely high compared with those of other vertical-type organic transistors. [16][17][18][19][20][21][22][23][24][25][26] The gate current density (J G ) also increased with increasing V DS ; however, the observed J G was three orders of magnitude lower than J DS . Carriers cannot be injected in a gate electrode with increasing positive gate voltage unless the gate voltage exceeds the breakdown voltage.…”
mentioning
confidence: 97%
“…5,9,10 In addition to planar OTFTs, vertical-type organic transistors have been reported in recent years. [15][16][17][18][19][20][21][22][23][24][25][26] The vertical structure is considered promising for attaining high-current and low-voltage operation, in which the carriers flow across the thin film in the vertical direction, perpendicular to the film plane, with short channel paths having lengths corresponding to the semiconductor film thickness. Several groups have reported vertical-type organic transistors such as polymer grid transistors, organic a Email: fukagawa.h-fe@nhk.or.jp b Present address: Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino-city, Nagano, 391-0292, Japan c Present address: Tohoku University, 6-6-05 Aramaki Aza Aoba, Aoba-ku, Sendai, 980-8579, Japan d Present address: Yamagata University, Research Center for Organic Electronics, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan static induction transistors (SITs), metal-base organic transistors (MBOTs), space-charge-limited transistors (SCLTs), patterned electrode vertical organic field effect transistor (PE-VOFET) and permeable-base transistor (PMBT) to realize a short channel.…”
mentioning
confidence: 99%
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