2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) 2017
DOI: 10.23919/eosesd.2017.8073447
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Schottky LDNMOS for HV ESD protection

Jian–Hsing Lee
1
,
Natarajan Mahadeva Iyer
2
,
Rachna Jain
3
et al.
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Cited by 6 publications
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References 16 publications
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High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities

Lin,
Chen,
Liu
et al. 2023
2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)
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High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities

Lin,
Chen,
Liu
et al. 2023
2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)
0
0
0
0
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RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

Lee,
Li,
Nidhi
et al. 2023
2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
3
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0
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A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

Lee,
Li,
Liao
et al. 2023
2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
3
0
0
0
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