Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy

Wang, S.; Li, T.; Reifsnider, Jason M.; Ye, Bo; Collins, Chris; Holmes, A. L.; Campbell, Joe C.

doi:10.1109/3.890266

Cited by 17 publications

(7 citation statements)

References 22 publications

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“…The grabbed transient response spectrum is displayed in Figure 6a exp(−t/τ 1 ) + A 2 exp(−t/τ 2 ), 19,20 as plotted by the red curve, where τ 1 and τ 2 are the relaxation time constants of the fast and slow decay processes, respectively. 19−23 The fast decay component of τ 1 = 11.33 μs is attributed to minority carrier recombination, while the slow decay component of τ 2 = 65.52 μs should be related to the carrier trapping effect.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Wang

You

et al. 2022

ACS Photonics

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We report high-performance visible-blind ultraviolet (UV) phototransistors (PTs) based on an enhanced HEMT structure. In dark conditions, the conduction channel was depleted, and the dark current density was suppressed to 2.63 × 10 −10 mA/mm. Under 345 nm UV illumination, the depletion region shrinks, and the two-dimensional electron gas (2DEG) recovers. A high photocurrent density of 37.39 mA/mm, a peak responsivity of 6.80 × 10 4 A/W, a large photo-to-darkcurrent ratio (PDCR) of 1.42 × 10 11 , and a superior UV-to-visible rejection ratio (UVRR) of 4.84 × 10 7 are exhibited. Most importantly, the device presents an ultrafast response time of 11.33 μs/65.52 μs, which is due to the significant suppression of the persistent photoconductivity effect by the built-in electric field in the p−n junction. The results suggest that the p-GaN/AlGaN/GaN PT is a brand-new device model that combines the advantages of photoconductors with high responsivity and photodiodes with low dark current and fast response time.

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Section: ■ Results and Discussionmentioning

confidence: 99%

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Wang

You

et al. 2022

ACS Photonics

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“…Wide band gap semiconductors such as 6H-SiC ͑3.0 eV, at 2 K͒ and GaN ͑3.5 eV͒ have received much attention in recent decades because of the increasing need for shortwavelength photonic devices and high-power high-frequency electronic devices. Breakthroughs in high quality growth of these materials have led to their wide employment in applications such as light-emitting diodes, 1,2 photodetectors, 3,4 and laser diode 5 optoelectronic devices. Both ZnO and GaN are considered direct competitors for these applications since both have wide band gap, 6 but ZnO has emerged as the preferred oxide material for optoelectronic applications because of its superior chemical and mechanical stability.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering

2006

Journal of Applied Physics

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Wide band gap nitrogen-doped p-type ZnO films are prepared by radio-frequency magnetron sputtering from a 99.99% purity ZnO target. The sputtering gas is Ar mixed with various flow rates of nitrogen gas. Hole concentrations increase from 1.89ϫ 10 15 to 2.11ϫ 10 19 cm −3 as the N 2 flow rate decreases from 15 to 6 SCCM ͑SCCM denotes cubic centimeter per minute at STP͒, i.e., increasing N 2 flow rate above 6 SCCM decreases the p-type carrier concentration. Microphotoluminescence ͑PL͒ spectra peaks are in the near-UV range and change from 384 nm ͑3.23 eV͒ to 374 nm ͑3.32 eV͒ with increasing N 2 flow rate. The PL peaks agree with the band gap of bulk ZnO, which comes from the recombination of free excitons. Raman spectra show six peaks: 436 ͑E 2 high-frequency phonon mode for undoped ZnO film͒, 581 ͓A 1 ͑LO͒ mode in ZnO:N film͔, 275, 508, 640, and 854 cm −1 ͑local vibrational modes of Raman features in N-doped ZnO film͒.

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“…With a 5-V applied bias, the noise power density for PD_A was significantly smaller than that for PD_B for a given frequency. For a given bandwidth B, the total squared noise current <i n > 2 can be estimated by integrating the noise spectral density, S n ( f ), over the frequency range [28] …”

Section: Methodsmentioning

confidence: 99%

InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${\rm Ga}_{2}{\rm O}_{3}$ Cap Layers

et al. 2013

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InGaN/GaN multiquantum-well (MQW) metalsemiconductor-metal photodetectors with a beta-Ga 2 O 3 cap layer formed by the furnace oxidation of a GaN epitaxial layer are fabricated and characterized. The beta-Ga 2 O 3 cap layer is found to suppress the reverse leakage current by at least about two orders of magnitude with a 5-V applied bias because it creates a thicker and higher potential barrier. The reverse leakage current can be further reduced and a 90-fold larger ultraviolet-to-visible rejection ratio can be achieved by using InGaN/GaN MQW layers, which confine the electron-hole pairs generated by lower-energy photons. In addition, the noise level is reduced and detectivity is increased. With a 5-V applied bias, the noise-equivalent power and normalized detectivity are 8.4 × 10 −13 W and 7.9× 10 12 cm Hz 0.5 W −1 , respectively.Index Terms-Ga 2 O 3 , InGaN/GaN, multiple quantum wells (MQWs), photodetectors.

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Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy

Cited by 17 publications

References 22 publications

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering

InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${\rm Ga}_{2}{\rm O}_{3}$ Cap Layers

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