Second Generation SLCFET Amplifier: Improved F<sub>T</sub>/F<sub>MAX</sub> and Noise Performance

Nagamatsu, Ken A.; Afroz, Shamima; Gupta, Shalini; Wanis, Sam; Hartman, Jeffrey; Stewart, Eric J.; Shea, Patrick B.; Renaldo, Karen; Howell, Robert S.; Novak, Brian; Drechsler, Annaliese; Chang, Josephine; Dawson, Dale; Freitag, R.G.; Frey, Kevin; Farrell, Monique; Siddiqi, Georges

doi:10.1109/bcicts45179.2019.8972728

Cited by 7 publications

(3 citation statements)

References 3 publications

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“…Another interesting trigate device structure that can offer high linearity in GaN power amplifier is superlattice castellated FET (SLCFET), which was originally proposed for RF switching applications [133][134][135][136]. The superlattice channel of the device consists of stacked 2DEG layers similar to the multi-channel structure shown in figure 1, where the trigate structure is essential for electrostatic control of the buried 2DEG layers.…”

Section: Lateral Rf Finfet and Trigate Hemtsmentioning

confidence: 99%

“…Due to the presence of multiple channels in SLCFET, g m shows unique double hump and broad plateau characteristics, which lead to higher linearity. Recently, L G = 150 nm T-gate SLCFET with f T = 47 GHz, f max = 124 GHz, P out > 6 W mm −1 , PAE > 45%, and OIP 3 /PDC = 6 dB at 30 GHz using large-signal measurement have been demonstrated in the second-generation GaN SLCFETs [134].…”

Section: Lateral Rf Finfet and Trigate Hemtsmentioning

confidence: 99%

See 1 more Smart Citation

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Zhang

Zubair

Liu

et al. 2021

Semicond. Sci. Technol.

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Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-frequency (RF) applications. While commercial GaN devices are increasingly being adopted in data centers, electric vehicles, consumer electronics, telecom and defense applications, their performance is still far from the intrinsic GaN limit. In the last few years, the fin field-effect transistor (FinFET) and trigate architectures have been leveraged to develop a new generation of GaN power and RF devices, which have continuously advanced the state-of-the-art in the area of microwave and power electronics. Very different from Si digital FinFET devices, GaN FinFETs have allowed for numerous structural innovations based on engineering the two-dimensional-electron gas or p–n junctions, in both lateral and vertical architectures. The superior gate controllability in these fin-based GaN devices has not only allowed higher current on/off ratio, steeper threshold swing, and suppression of short-channel effects, but also enhancement-mode operation, on-resistance reduction, current collapse alleviation, linearity improvement, higher operating frequency, and enhanced thermal management. Several GaN FinFET and trigate device technologies are close to commercialization. This review paper presents a global overview of the reported GaN FinFET and trigate device technologies for RF and power applications, as well as provides in-depth analyses correlating device design parameters to device performance space. The paper concludes with a summary of current challenges and exciting research opportunities in this very dynamic research field.

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Section: Lateral Rf Finfet and Trigate Hemtsmentioning

confidence: 99%

Section: Lateral Rf Finfet and Trigate Hemtsmentioning

confidence: 99%

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Zhang

Zubair

Liu

et al. 2021

Semicond. Sci. Technol.

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“…For a nanochannel structure, there are two different gate structures, namely, a tri-gate structure [ 21 , 22 ] and dual-gate structure [ 23 , 24 , 25 , 26 ], which demonstrate the potential for the improvement in device linearity. Compared with tri-gate GaN HEMTs with multiple channels [ 27 ], dual-gate GaN HEMTs for multi-channel epitaxial design can achieve flattened transconductance, and thus, improve the device linearity and saturated current density simultaneously [ 25 , 26 ]. However, the characteristic difference between tri-gate and dual-gate structures has rarely been compared simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

et al. 2023

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In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. It was found that the peak value of the transconductance (Gm), current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the TGN-devices were larger than that of the DGN-devices because of the enhanced gate control from the top gate. Although the TGN-devices and DGN-devices demonstrated flattened transconductance, fT and fmax profiles, the first and second transconductance derivatives of the DGN-devices were lower than those of the TGN-devices, implying an improvement in linearity. With the nanochannel width decreased, the peak value of the transconductance and the first and second transconductance derivatives increased, implying the predominant influence of sidewall gate capacitance on the transconductance and linearity. The comparison of gate capacitance for the TGN-devices and DGN-devices revealed that the gate capacitance of the tri-gate structure was not simply a linear superposition of the top planar gate capacitance and sidewall gate capacitance of the dual-gate structure, which could be attributed to the difference in the depletion region shape for tri-gate and dual-gate structures.

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SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch

Khandelwal

Novak

Merkel

et al. 2020

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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Second Generation SLCFET Amplifier: Improved F_T/F_MAX and Noise Performance

Cited by 7 publications

References 3 publications

GaN FinFETs and trigate devices for power and RF applications: review and perspective

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch

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Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance

Cited by 7 publications

References 3 publications

GaN FinFETs and trigate devices for power and RF applications: review and perspective

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch

Contact Info

Product

Resources

About

Second Generation SLCFET Amplifier: Improved F_T/F_MAX and Noise Performance